Magnetoresistance of Nanoscale Domain Walls Formed in Arrays of Parallel Nanowires

Jingchun Wang, Floriano Cuccureddu, Rafael Ramos, Cormac O. Coileain, Igor V. Shvets, Han Chun Wu

Research output: Contribution to journalArticlepeer-review

Abstract

We present the possibility of enhancing magnetoresistance (MR) by controlling nanoscale domain wall (DW) width in a planar nanowire array. Results based on micromagnetic calculations show that DW width decreases with increasing exchange bias field and decreases with reducing exchange interaction between neighboring nanowires. Fe/Fe3O4 nanowire arrays were grown on c-plane sapphire to demonstrate the feasibility of this concept, and an enhanced MR ratio of 3.7% was observed at room temperature. compared with flat and stepped Fe3O4 thin films.

Original languageEnglish
Article number1950004
JournalSPIN
Volume9
Issue number1
DOIs
Publication statusPublished - 2019 Mar 1
Externally publishedYes

Keywords

  • Domain wall
  • magnetoresistance
  • nanowire

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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