Magnetoresistance of n-type ZnO:Al and Zn 1-xMn xO:Al thin films

T. Andrearczyk, J. Jaroszyński, G. Grabecki, T. Dietl, T. Fukumura, M. Kawasaki

Research output: Contribution to journalConference articlepeer-review

6 Citations (Scopus)


The role of spin-orbit and s-d exchange interactions is investigated by magnetoresistance (MR) measurements carried out down to 50 mK on ZnO and Zn 1-xMn xO with x = 3 and 7% and electron concentration ∼ 10 20 cm -3. The data for ZnO:Al leads to the coupling constant λ so = (4.4 ± 0.4) × 10 -11 eV cm of the kp hamiltonian for the wurzite structure, H so = λ soc(s × k). Complex MR of Zn 1-xMn xO:Al is interpreted in terms of the influence of the s-d spin-splitting on the disorder-modified electron-electron interactions and precursor effects of magnetism-related localization.

Original languageEnglish
Pages (from-to)1030-1033
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number4
Publication statusPublished - 2006 May 9
Event12th International Conference on II-VI Compounds - Warsaw, Poland
Duration: 2005 Sep 122005 Sep 16

ASJC Scopus subject areas

  • Condensed Matter Physics


Dive into the research topics of 'Magnetoresistance of n-type ZnO:Al and Zn 1-xMn xO:Al thin films'. Together they form a unique fingerprint.

Cite this