Magnetoresistance of Magnetic Tunnel Junctions with Zn0.4Fe 2.6O4 Thin Films

Kazumasa Nishimura, Nobuki Tezuka, Satoshi Sugimoto, Koichiro Inomata

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1 Citation (Scopus)


Both magnetic and electric properties were investigated of Zn 0.4Fe2.6O4 thin films grown on a MgO(110) single-crystal substrate with a TiN(110) buffer layer by using RF magnetron sputtering. X-ray diffraction patterns showed that the films grow with (110) orientation parallel to the MgO(110) surface. The saturation magnetization at room temperature was measured to be 0.59 Wbm-1 by vibrating sample magnetometer. Magnetic tunnel junction (MTJ), consisting of MgO(110)/TiN/Zn 0.4Fe2.6O4/AlOx/Co 9Fe/Ni8Fe2/Ta, were fabricated and showed a magnetoresistance (MR) ratio of about 6% at room temperature. The MR ratio increased up to 10% with decreasing temperature down to 75 K, while below 75 K, the MR ratio decreased with decreasing temperature.

Original languageEnglish
Pages (from-to)82-85
Number of pages4
JournalNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
Issue number2
Publication statusPublished - 2004 Feb


  • Half-metals
  • Spin polarization
  • Spinel ferrite
  • Tunneling magnetoresitance

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys
  • Materials Chemistry


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