Magnetoresistance of Magnetic Double Tunnel Junctions

Hiroaki Sukegawa; Nobuki Tezuka; Koichiro Inomata; Satoshi Sugimoto

doi:10.2320/jinstmet.68.74

Magnetoresistance of Magnetic Double Tunnel Junctions

Hiroaki Sukegawa, Nobuki Tezuka, Koichiro Inomata, Satoshi Sugimoto

ENG - Materials Science

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Magnetic double tunnel junctions (DTJs) have been investigated to achieve weak bias voltage dependence and to obtain large magnetoresistance (MR) ratio at several hundred mV. IrMn/Co₉₀Fe₁₀/AlO_x/Co ₉₀Fe₁₀/AlO_x/Co₉₀Fe ₁₀/IrMn structures were prepared as dual-spin-valve-type DTJs, which possess the middle ferromagnetic layers consisting of both continuous and discontinuous Co₉₀Fe₁₀ films. For the DTJs with continuous middle Co₉₀Fe₁₀ layers, the bias voltage value which MR ratio reduces by half ( V_h) was about 880 mV, while that of single tunnel junctions (STJs) was about 450 mV. For the DTJs with discontinuous middle Co₉₀Fe₁₀ layers, it was found that the resistance increased remarkably and the magnetic field response decreased in MR curves. The discontinuous Co₉₀Fe₁₀ layers showed superparamagnetic behavior in magnetization curves.

Original language	English
Pages (from-to)	74-77
Number of pages	4
Journal	Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
Volume	68
Issue number	2
DOIs	https://doi.org/10.2320/jinstmet.68.74
Publication status	Published - 2004 Feb

Keywords

Co-tunneling
Double tunnel junction
Nanoparticles
Tunnel magnetoresistance

ASJC Scopus subject areas

Condensed Matter Physics
Mechanics of Materials
Metals and Alloys
Materials Chemistry

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title = "Magnetoresistance of Magnetic Double Tunnel Junctions",

abstract = "Magnetic double tunnel junctions (DTJs) have been investigated to achieve weak bias voltage dependence and to obtain large magnetoresistance (MR) ratio at several hundred mV. IrMn/Co90Fe10/AlOx/Co 90Fe10/AlOx/Co90Fe 10/IrMn structures were prepared as dual-spin-valve-type DTJs, which possess the middle ferromagnetic layers consisting of both continuous and discontinuous Co90Fe10 films. For the DTJs with continuous middle Co90Fe10 layers, the bias voltage value which MR ratio reduces by half ( Vh) was about 880 mV, while that of single tunnel junctions (STJs) was about 450 mV. For the DTJs with discontinuous middle Co90Fe10 layers, it was found that the resistance increased remarkably and the magnetic field response decreased in MR curves. The discontinuous Co90Fe10 layers showed superparamagnetic behavior in magnetization curves.",

keywords = "Co-tunneling, Double tunnel junction, Nanoparticles, Tunnel magnetoresistance",

author = "Hiroaki Sukegawa and Nobuki Tezuka and Koichiro Inomata and Satoshi Sugimoto",

year = "2004",

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doi = "10.2320/jinstmet.68.74",

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T1 - Magnetoresistance of Magnetic Double Tunnel Junctions

AU - Sukegawa, Hiroaki

AU - Tezuka, Nobuki

AU - Inomata, Koichiro

AU - Sugimoto, Satoshi

PY - 2004/2

Y1 - 2004/2

N2 - Magnetic double tunnel junctions (DTJs) have been investigated to achieve weak bias voltage dependence and to obtain large magnetoresistance (MR) ratio at several hundred mV. IrMn/Co90Fe10/AlOx/Co 90Fe10/AlOx/Co90Fe 10/IrMn structures were prepared as dual-spin-valve-type DTJs, which possess the middle ferromagnetic layers consisting of both continuous and discontinuous Co90Fe10 films. For the DTJs with continuous middle Co90Fe10 layers, the bias voltage value which MR ratio reduces by half ( Vh) was about 880 mV, while that of single tunnel junctions (STJs) was about 450 mV. For the DTJs with discontinuous middle Co90Fe10 layers, it was found that the resistance increased remarkably and the magnetic field response decreased in MR curves. The discontinuous Co90Fe10 layers showed superparamagnetic behavior in magnetization curves.

AB - Magnetic double tunnel junctions (DTJs) have been investigated to achieve weak bias voltage dependence and to obtain large magnetoresistance (MR) ratio at several hundred mV. IrMn/Co90Fe10/AlOx/Co 90Fe10/AlOx/Co90Fe 10/IrMn structures were prepared as dual-spin-valve-type DTJs, which possess the middle ferromagnetic layers consisting of both continuous and discontinuous Co90Fe10 films. For the DTJs with continuous middle Co90Fe10 layers, the bias voltage value which MR ratio reduces by half ( Vh) was about 880 mV, while that of single tunnel junctions (STJs) was about 450 mV. For the DTJs with discontinuous middle Co90Fe10 layers, it was found that the resistance increased remarkably and the magnetic field response decreased in MR curves. The discontinuous Co90Fe10 layers showed superparamagnetic behavior in magnetization curves.

KW - Co-tunneling

KW - Double tunnel junction

KW - Nanoparticles

KW - Tunnel magnetoresistance

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