Magnetoresistance of Magnetic Double Tunnel Junctions

Hiroaki Sukegawa, Nobuki Tezuka, Koichiro Inomata, Satoshi Sugimoto

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Magnetic double tunnel junctions (DTJs) have been investigated to achieve weak bias voltage dependence and to obtain large magnetoresistance (MR) ratio at several hundred mV. IrMn/Co90Fe10/AlOx/Co 90Fe10/AlOx/Co90Fe 10/IrMn structures were prepared as dual-spin-valve-type DTJs, which possess the middle ferromagnetic layers consisting of both continuous and discontinuous Co90Fe10 films. For the DTJs with continuous middle Co90Fe10 layers, the bias voltage value which MR ratio reduces by half ( Vh) was about 880 mV, while that of single tunnel junctions (STJs) was about 450 mV. For the DTJs with discontinuous middle Co90Fe10 layers, it was found that the resistance increased remarkably and the magnetic field response decreased in MR curves. The discontinuous Co90Fe10 layers showed superparamagnetic behavior in magnetization curves.

Original languageEnglish
Pages (from-to)74-77
Number of pages4
JournalNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
Issue number2
Publication statusPublished - 2004 Feb


  • Co-tunneling
  • Double tunnel junction
  • Nanoparticles
  • Tunnel magnetoresistance

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys
  • Materials Chemistry


Dive into the research topics of 'Magnetoresistance of Magnetic Double Tunnel Junctions'. Together they form a unique fingerprint.

Cite this