We have achieved a magnetoresistance (MR) ratio of 7%-10% at a resistance area product (RA) of 0.5-1.5 Ωμm2 by ferromagnetic FeCo nanocontacts in Al nano-oxide-layer (NOL) with current-perpendicular-to-plane spin-valve (CPP-SV) structure. Conductive atomic-force-microscopy shows clear current-path regions of a few nanometers in size surrounded by the Al-NOL. The MR dependence on resistance area product (RA) is well explained by the current-confined-path model assuming that the spin-dependent scattering has an FeCo nanocontact origin, different from tunnel magnetoresistance (TMR). Resistance increases with increasing bias voltage, indicating joule heating by high-current density in nanocontacts, in contrast to TMR. The MR origin is mainly interpreted as spin-dependent scattering due to domain wall formed at ferromagnetic nanocontact.
- Conductive atomic-force-microscopy
- Domain wall
- Nanocontact magnetoresistance (MR)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering