Magnetoresistance in tunnel junctions using Co 2(Cr,Fe)Al full Heusler alloys

K. Inomata; N. Tezuka; S. Okamura; H. Kurebayashi; A. Hirohata

doi:10.1063/1.1651813

Magnetoresistance in tunnel junctions using Co ₂(Cr,Fe)Al full Heusler alloys

K. Inomata, N. Tezuka, S. Okamura, H. Kurebayashi, A. Hirohata

ENG - Materials Science

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

A magnetron sputtering system was used to grow Co ₂(Cr _1-xFe _x)Al Heusler alloy films on thermally oxidized Si substrates at room temperature without any buffer layers. The x-ray diffraction patterns did not show the L2 ₁ structure as expected for the bulk but revealed the B2 and A2 structures, depending on the Fe concentration x. It was observed that the magnetic moment and the Curie temperature monotonically increased with increasing x. The results show that the maximum tunneling magnetoresistance at room temperature is obtained as 19% for x=0.4.

Original language	English
Pages (from-to)	7234-7236
Number of pages	3
Journal	Journal of Applied Physics
Volume	95
Issue number	11 II
DOIs	https://doi.org/10.1063/1.1651813
Publication status	Published - 2004 Jun 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Magnetoresistance in tunnel junctions using Co 2(Cr,Fe)Al full Heusler alloys",

abstract = "A magnetron sputtering system was used to grow Co 2(Cr 1-xFe x)Al Heusler alloy films on thermally oxidized Si substrates at room temperature without any buffer layers. The x-ray diffraction patterns did not show the L2 1 structure as expected for the bulk but revealed the B2 and A2 structures, depending on the Fe concentration x. It was observed that the magnetic moment and the Curie temperature monotonically increased with increasing x. The results show that the maximum tunneling magnetoresistance at room temperature is obtained as 19% for x=0.4.",

author = "K. Inomata and N. Tezuka and S. Okamura and H. Kurebayashi and A. Hirohata",

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AU - Inomata, K.

AU - Tezuka, N.

AU - Okamura, S.

AU - Kurebayashi, H.

AU - Hirohata, A.

PY - 2004/6/1

Y1 - 2004/6/1

N2 - A magnetron sputtering system was used to grow Co 2(Cr 1-xFe x)Al Heusler alloy films on thermally oxidized Si substrates at room temperature without any buffer layers. The x-ray diffraction patterns did not show the L2 1 structure as expected for the bulk but revealed the B2 and A2 structures, depending on the Fe concentration x. It was observed that the magnetic moment and the Curie temperature monotonically increased with increasing x. The results show that the maximum tunneling magnetoresistance at room temperature is obtained as 19% for x=0.4.

AB - A magnetron sputtering system was used to grow Co 2(Cr 1-xFe x)Al Heusler alloy films on thermally oxidized Si substrates at room temperature without any buffer layers. The x-ray diffraction patterns did not show the L2 1 structure as expected for the bulk but revealed the B2 and A2 structures, depending on the Fe concentration x. It was observed that the magnetic moment and the Curie temperature monotonically increased with increasing x. The results show that the maximum tunneling magnetoresistance at room temperature is obtained as 19% for x=0.4.

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Magnetoresistance in tunnel junctions using Co ₂(Cr,Fe)Al full Heusler alloys

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