Magnetoresistance in tunnel junctions using Co 2(Cr,Fe)Al full Heusler alloys

K. Inomata, N. Tezuka, S. Okamura, H. Kurebayashi, A. Hirohata

Research output: Contribution to journalArticlepeer-review

46 Citations (Scopus)


A magnetron sputtering system was used to grow Co 2(Cr 1-xFe x)Al Heusler alloy films on thermally oxidized Si substrates at room temperature without any buffer layers. The x-ray diffraction patterns did not show the L2 1 structure as expected for the bulk but revealed the B2 and A2 structures, depending on the Fe concentration x. It was observed that the magnetic moment and the Curie temperature monotonically increased with increasing x. The results show that the maximum tunneling magnetoresistance at room temperature is obtained as 19% for x=0.4.

Original languageEnglish
Pages (from-to)7234-7236
Number of pages3
JournalJournal of Applied Physics
Issue number11 II
Publication statusPublished - 2004 Jun 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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