Abstract
We have used molecular beam epitaxy apparatus to grow Fe-Si films. The films were grown by first depositing a nominal 40 Å of Fe, then a nominal thickness of Si, then a further nominal 40 Å of Fe. A plot of the ratio (remanent magnetisation/saturation magnetization) versus nominal Si layer thickness shows a minimum for a nominal thickness of 25 Å, and a plot of saturation field versus nominal Si thickness has a maximum for a nominal thickness of 20 Å. We find a room temperature magnetoresistance of more than 2% in films with nominal Si layer thicknesses of 20 Å. Raising the temperature causes a decrease in (remanent magnetization/saturation magnetisation) for films with nominal Si thicknesses of 20 Å and 25 Å.
Original language | English |
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Pages (from-to) | 95-101 |
Number of pages | 7 |
Journal | Journal of Magnetism and Magnetic Materials |
Volume | 151 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - 1995 Nov 2 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics