The magnetoresistance effects of the perpendicular magnetic tunnel junctions (p-MTJs) based on Mn-Ga ordered alloys are reported. By tuning the Mn-Ga composition, the MTJs based on L10 and D022 structured Mn-Ga alloys were achieved in the MTJ stack structure of Cr(40)/MnxGa100 - x(30)/Mg(0.4)/MgO(2.2)/CoFeB(1.2)/Ta(5)/ Ru(7) (nm). The values of magnetoresistance (MR) ratio at room temperature for different Mn-Ga composition are around 5%. In order to enhance the MR ratio, a thin CoFeB layer was introduced between the Mn-Ga and the MgO barrier. The MR effect shows a strong Mn-Ga composition dependent as CoFeB interlayer thickness increases. An MR ratio of 50% was obtained at room temperature when the CoFeB thickness is 1.5 nm for Mn62 Ga38 based MTJs.
- MgO barrier
- Mn-Ga alloy
- perpendicular magnetic tunnel junctions
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering