Magnetoresistance effect of magnetic tunnel junction with C0 2Tio.5Mno.5Al full-heusler alloy thin film

Akihiro Sasaki, Nobuki Tezuka, Satoshi Sugimoto, Akinari Okubo, Rie Umetsu, Ryosuke Kainuma

Research output: Contribution to journalArticlepeer-review


We investigated the magnetoresistance effect for a magnetic tunnel junction (MTJ) using a C02Tio.5Mno.5Al electrode on a Cr buffered MgO(00l) single crystal substrate. The C02Ti o.5Mno.5Al formed an ordered L21 and B2 structures after post-annealing above 873 K and below 773 K, respectively. Maximum magnetization and minimum coercivity were exhibited in C0 2Tio.5Mno.5Al annealed at 673 K. The MTJ using a C02Tio.5Mno.5Al electrode with B2 structure exhibited tunnel magnetoresistance (TMR) ratio of 37% at room temperature and 60% at 5 K. The TMR ratio was larger than that of MTJ using a C0 2Tio.5Mno.5Al electrode with L21 structure in this study.

Original languageEnglish
Pages (from-to)670-673
Number of pages4
JournalNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
Issue number9
Publication statusPublished - 2009 Sep


  • Ferromagnetic tunnel junction
  • Full-Heusler alloy
  • Tunnel magnetoresistance effect

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Magnetoresistance effect of magnetic tunnel junction with C0 <sub>2</sub>Ti<sub>o.5</sub>Mn<sub>o.5</sub>Al full-heusler alloy thin film'. Together they form a unique fingerprint.

Cite this