Magnetoresistance effect in tunnel junctions with perpendicularly magnetized D022-Mn3-δGa electrode and MgO barrier

Takahide Kubota; Yoshio Miura; Daisuke Watanabe; Shigemi Mizukami; Feng Wu; Hiroshi Naganuma; Xianmin Zhang; Mikihiko Oogane; Masafumi Shirai; Yasuo Ando; Terunobu Miyazaki

doi:10.1143/APEX.4.043002

Magnetoresistance effect in tunnel junctions with perpendicularly magnetized D0₂₂-Mn_3-δGa electrode and MgO barrier

Takahide Kubota, Yoshio Miura, Daisuke Watanabe, Shigemi Mizukami, Feng Wu, Hiroshi Naganuma, Xianmin Zhang, Mikihiko Oogane, Masafumi Shirai, Yasuo Ando, Terunobu Miyazaki

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Abstract

The tunnel magnetoresistance (TMR) effect with a perpendicularly magnetized D0₂₂-Mn_3-δsGa (δ = 0.6) electrode was investigated in epitaxially grown D0₂₂-Mn_3-δGa (30)/Mg (d_Mg)/MgO (2)/CoFe (2.5) (nm) magnetic tunnel junctions (MTJs). The maximum TMR ratio of 9.8% (22.1%) was achieved at 300 K (10 K) with d_Mg = 0.4 nm. The bias voltage dependence of differential conductance spectra suggests the existence of a coherent tunneling process in the MTJs. First principles calculations of band dispersion relations and tunneling transmittance in a Mn₃Ga/MgO/Mn₃Ga structure were also performed. The results revealed the existence of Δ₁-bands in Mn₃Ga and demonstrated the possibility of a coherent tunneling process existing in the MTJ.

Original language	English
Article number	043002
Journal	Applied Physics Express
Volume	4
Issue number	4
DOIs	https://doi.org/10.1143/APEX.4.043002
Publication status	Published - 2011 Apr

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Magnetoresistance effect in tunnel junctions with perpendicularly magnetized D022-Mn3-δGa electrode and MgO barrier",

abstract = "The tunnel magnetoresistance (TMR) effect with a perpendicularly magnetized D022-Mn3-δsGa (δ = 0.6) electrode was investigated in epitaxially grown D022-Mn3-δGa (30)/Mg (dMg)/MgO (2)/CoFe (2.5) (nm) magnetic tunnel junctions (MTJs). The maximum TMR ratio of 9.8% (22.1%) was achieved at 300 K (10 K) with dMg = 0.4 nm. The bias voltage dependence of differential conductance spectra suggests the existence of a coherent tunneling process in the MTJs. First principles calculations of band dispersion relations and tunneling transmittance in a Mn3Ga/MgO/Mn3Ga structure were also performed. The results revealed the existence of Δ1-bands in Mn3Ga and demonstrated the possibility of a coherent tunneling process existing in the MTJ.",

author = "Takahide Kubota and Yoshio Miura and Daisuke Watanabe and Shigemi Mizukami and Feng Wu and Hiroshi Naganuma and Xianmin Zhang and Mikihiko Oogane and Masafumi Shirai and Yasuo Ando and Terunobu Miyazaki",

year = "2011",

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doi = "10.1143/APEX.4.043002",

language = "English",

volume = "4",

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T1 - Magnetoresistance effect in tunnel junctions with perpendicularly magnetized D022-Mn3-δGa electrode and MgO barrier

AU - Kubota, Takahide

AU - Miura, Yoshio

AU - Watanabe, Daisuke

AU - Mizukami, Shigemi

AU - Wu, Feng

AU - Naganuma, Hiroshi

AU - Zhang, Xianmin

AU - Oogane, Mikihiko

AU - Shirai, Masafumi

AU - Ando, Yasuo

AU - Miyazaki, Terunobu

PY - 2011/4

Y1 - 2011/4

N2 - The tunnel magnetoresistance (TMR) effect with a perpendicularly magnetized D022-Mn3-δsGa (δ = 0.6) electrode was investigated in epitaxially grown D022-Mn3-δGa (30)/Mg (dMg)/MgO (2)/CoFe (2.5) (nm) magnetic tunnel junctions (MTJs). The maximum TMR ratio of 9.8% (22.1%) was achieved at 300 K (10 K) with dMg = 0.4 nm. The bias voltage dependence of differential conductance spectra suggests the existence of a coherent tunneling process in the MTJs. First principles calculations of band dispersion relations and tunneling transmittance in a Mn3Ga/MgO/Mn3Ga structure were also performed. The results revealed the existence of Δ1-bands in Mn3Ga and demonstrated the possibility of a coherent tunneling process existing in the MTJ.

AB - The tunnel magnetoresistance (TMR) effect with a perpendicularly magnetized D022-Mn3-δsGa (δ = 0.6) electrode was investigated in epitaxially grown D022-Mn3-δGa (30)/Mg (dMg)/MgO (2)/CoFe (2.5) (nm) magnetic tunnel junctions (MTJs). The maximum TMR ratio of 9.8% (22.1%) was achieved at 300 K (10 K) with dMg = 0.4 nm. The bias voltage dependence of differential conductance spectra suggests the existence of a coherent tunneling process in the MTJs. First principles calculations of band dispersion relations and tunneling transmittance in a Mn3Ga/MgO/Mn3Ga structure were also performed. The results revealed the existence of Δ1-bands in Mn3Ga and demonstrated the possibility of a coherent tunneling process existing in the MTJ.

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Magnetoresistance effect in tunnel junctions with perpendicularly magnetized D0₂₂-Mn_3-δGa electrode and MgO barrier

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