Magnetoresistance effect in L1 0-MnGa/MgO/CoFeB perpendicular magnetic tunnel junctions with Co interlayer

Q. L. Ma, T. Kubota, S. Mizukami, X. M. Zhang, H. Naganuma, M. Oogane, Y. Ando, T. Miyazaki

Research output: Contribution to journalArticle

51 Citations (Scopus)

Abstract

The fully perpendicular magnetic tunnel junctions (p-MTJs) based on L1 0-MnGa and thin CoFeB electrodes with MgO barrier were reported in this letter. A thin Co layer was introduced between the MnGa layer and the MgO barrier layer to investigate interfacial effect on the device's magnetic and transport properties. The magnetoresistance ratio improved significantly due to the Co insertion, and reached 40 at room temperature (80 at 5 K) when the Co thickness was 1.5 nm. Moreover, the junctions with Co interlayer exhibited four low-resistance states in one full cycle rather than two in normal MTJs. The physical origin was discussed by considering the coupling between MnGa and Co layers.

Original languageEnglish
Article number032402
JournalApplied Physics Letters
Volume101
Issue number3
DOIs
Publication statusPublished - 2012 Jul 16

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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