Magnetoresistance effect in Fe20Ni80/graphene/Fe20Ni80 vertical spin valves

Shiro Entani, Takeshi Seki, Yuya Sakuraba, Tatsuya Yamamoto, Saburo Takahashi, Hiroshi Naramoto, Koki Takanashi, Seiji Sakai

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7 Citations (Scopus)

Abstract

Vertical spin valve devices with junctions of single- and bi-layer graphene interlayers sandwiched with Fe20Ni80 (Permalloy) electrodes were fabricated by exploiting the direct growth of graphene on the Permalloy. The linear current-voltage characteristics indicated that ohmic contacts were realized at the interfaces. The systematic characterization revealed the significant modification of the electronic state of the interfacial graphene layer on the Permalloy surface, which indicates the strong interactions at the interface. The ohmic transport was attributable to the strong interface-interaction. The vertical resistivity of the graphene interlayer and the spin asymmetry coefficient at the graphene/Permalloy interface were obtained to be 0.13 Ω cm and 0.06, respectively. It was found that the strong interface interaction modifies the electronic structure and metallic properties in the vertical spin valve devices with bi-layer graphene as well as single-layer graphene.

Original languageEnglish
Article number082406
JournalApplied Physics Letters
Volume109
Issue number8
DOIs
Publication statusPublished - 2016 Aug 22

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Entani, S., Seki, T., Sakuraba, Y., Yamamoto, T., Takahashi, S., Naramoto, H., Takanashi, K., & Sakai, S. (2016). Magnetoresistance effect in Fe20Ni80/graphene/Fe20Ni80 vertical spin valves. Applied Physics Letters, 109(8), [082406]. https://doi.org/10.1063/1.4961669