Magnetoresistance effect in Co2MnSi/semimetallic-Fe 2VAl/CoFe junctions

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3 Citations (Scopus)

Abstract

Epitaxially grown semimetallic-Fe2VAl Heusler thin films were fabricated on single crystalline MgO (100) substrate. Crystalline structure, magnetic property, and electrical transport property of the films were investigated. Non-magnetic and bulk-like resistivity was achieved in a B2-ordred Fe2VAl film annealed at 700°C. Curret-perpendicular-to-plane (CPP-) Magnetoresistance effect in Co2MnSi/Fe2VAl/CoFe junctions was also investigated. Maximum value of MR ratio was 1.1% at room temperature, which is an evidence of spin-dependent transport through Fe 2VAl Heusler alloy.

Original languageEnglish
Article number012096
JournalJournal of Physics: Conference Series
Volume266
Issue number1
DOIs
Publication statusPublished - 2011

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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