Magnetoresistance effect and interlayer coupling of (Ga,Mn)As trilayer structures

D. Chiba, N. Akiba, F. Matsukura, Y. Ohno, H. Ohno

Research output: Contribution to journalArticlepeer-review

146 Citations (Scopus)


We have investigated the magnetic and magnetotransport properties of (Ga, Mn)As/(Al, Ga)As/ (Ga, Mn)As semiconductor-based magnetic trilayer structures. We observe a weak ferromagnetic interlayer coupling between the two ferromagnetic (Ga, Mn)As layers as well as magnetoresistance effects due to spin-dependent scattering and to spin-dependent tunneling. Both the coupling strength and the magnetoresistance ratio decrease with the increase of temperature and/or the increase of Al composition of the nonmagnetic (Al, Ga)As layer.

Original languageEnglish
Pages (from-to)1873-1875
Number of pages3
JournalApplied Physics Letters
Issue number12
Publication statusPublished - 2000 Sep 18

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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