Magnetoresistance effect and interlayer coupling of (Ga,Mn)As trilayer structures

D. Chiba; N. Akiba; F. Matsukura; Y. Ohno; H. Ohno

doi:10.1063/1.1310626

Magnetoresistance effect and interlayer coupling of (Ga,Mn)As trilayer structures

D. Chiba, N. Akiba, F. Matsukura, Y. Ohno, H. Ohno

Research output: Contribution to journal › Article › peer-review

142 Citations (Scopus)

Abstract

We have investigated the magnetic and magnetotransport properties of (Ga, Mn)As/(Al, Ga)As/ (Ga, Mn)As semiconductor-based magnetic trilayer structures. We observe a weak ferromagnetic interlayer coupling between the two ferromagnetic (Ga, Mn)As layers as well as magnetoresistance effects due to spin-dependent scattering and to spin-dependent tunneling. Both the coupling strength and the magnetoresistance ratio decrease with the increase of temperature and/or the increase of Al composition of the nonmagnetic (Al, Ga)As layer.

Original language	English
Pages (from-to)	1873-1875
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	12
DOIs	https://doi.org/10.1063/1.1310626
Publication status	Published - 2000 Sep 18

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "We have investigated the magnetic and magnetotransport properties of (Ga, Mn)As/(Al, Ga)As/ (Ga, Mn)As semiconductor-based magnetic trilayer structures. We observe a weak ferromagnetic interlayer coupling between the two ferromagnetic (Ga, Mn)As layers as well as magnetoresistance effects due to spin-dependent scattering and to spin-dependent tunneling. Both the coupling strength and the magnetoresistance ratio decrease with the increase of temperature and/or the increase of Al composition of the nonmagnetic (Al, Ga)As layer.",

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AU - Chiba, D.

AU - Akiba, N.

AU - Matsukura, F.

AU - Ohno, Y.

AU - Ohno, H.

PY - 2000/9/18

Y1 - 2000/9/18

N2 - We have investigated the magnetic and magnetotransport properties of (Ga, Mn)As/(Al, Ga)As/ (Ga, Mn)As semiconductor-based magnetic trilayer structures. We observe a weak ferromagnetic interlayer coupling between the two ferromagnetic (Ga, Mn)As layers as well as magnetoresistance effects due to spin-dependent scattering and to spin-dependent tunneling. Both the coupling strength and the magnetoresistance ratio decrease with the increase of temperature and/or the increase of Al composition of the nonmagnetic (Al, Ga)As layer.

AB - We have investigated the magnetic and magnetotransport properties of (Ga, Mn)As/(Al, Ga)As/ (Ga, Mn)As semiconductor-based magnetic trilayer structures. We observe a weak ferromagnetic interlayer coupling between the two ferromagnetic (Ga, Mn)As layers as well as magnetoresistance effects due to spin-dependent scattering and to spin-dependent tunneling. Both the coupling strength and the magnetoresistance ratio decrease with the increase of temperature and/or the increase of Al composition of the nonmagnetic (Al, Ga)As layer.

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