TY - JOUR
T1 - Magnetoresistance associated with antiferromagnetic interlayer coupling spaced by a semiconductor in Fe /Si multilayers
AU - Inomata, K.
AU - Yusu, K.
AU - Saito, Yoshiaki
PY - 1995/1/1
Y1 - 1995/1/1
N2 - Multilayer Fe/Si films with constant Fe thickness (2.6 nm) and variable Si thickness are investigated. Negative magnetoresistance is observed and two different temperature dependences are found as a function of Si thickness. For tSi=1.2 nm, the magnetoresistance decreases with temperature decrease. For tSi>1.5 nm, the magnetoresistance increases (weakly) with temperature decrease. The magnetoresistance is attributed to spin-dependent scattering caused by antiferromagnetic layer coupling across a semiconducting spacer: narrow gap iron silicide for thin Si spacer layers and amorphous Si for thicker spacer layers.
AB - Multilayer Fe/Si films with constant Fe thickness (2.6 nm) and variable Si thickness are investigated. Negative magnetoresistance is observed and two different temperature dependences are found as a function of Si thickness. For tSi=1.2 nm, the magnetoresistance decreases with temperature decrease. For tSi>1.5 nm, the magnetoresistance increases (weakly) with temperature decrease. The magnetoresistance is attributed to spin-dependent scattering caused by antiferromagnetic layer coupling across a semiconducting spacer: narrow gap iron silicide for thin Si spacer layers and amorphous Si for thicker spacer layers.
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U2 - 10.1103/PhysRevLett.74.1863
DO - 10.1103/PhysRevLett.74.1863
M3 - Article
AN - SCOPUS:3543020811
VL - 74
SP - 1863
EP - 1866
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 10
ER -