Magnetoresistance and Hall effects of Fe-Ni-M alloy thin films

T. Tanaka; I. Kobayashi; M. Takahashi; M. Kunii; T. Wakiyama

doi:10.1109/TJMJ.1990.4564413

Magnetoresistance and Hall effects of Fe-Ni-M alloy thin films

T. Tanaka, I. Kobayashi, M. Takahashi, M. Kunii, T. Wakiyama

Tohoku University

Research output: Contribution to journal › Article › peer-review

Abstract

The relations between the anisotropic magnetoresistivity ratio Δρ/ρ₀, the ordinary Hall coefficient R₀, and the extraordinary Hall coefficient R_s were studied for Ni-Fe binary alloy and for (Ni_89.5Fe_10.5) M (M = Co, Cu, Nb, Gd, Al, Si, and Bi) ternary alloy thin films, to obtain guidelines in searching for new materials with large values of Δρ/ρ₀. It is found that the value of Δρ/ρ₀ increases with increases in the absolute value of R₀, and also shows a maximum (Δρ/ρ₀ ≈ 4%) at R_S = 0. For ferromagnetic metals, a large value of Δρ/ρ₀ can be obtained under the following conditions: (1) the sign of R₀ is negative and the absolute value of R₀ is large (carriers are electron-like and the effective carrier density η_eff is small), and (2) R_s is zero. Sample preparation and experimental procedure are described, and the results are discussed.

Original language	English
Pages (from-to)	1127-1133
Number of pages	7
Journal	IEEE translation journal on magnetics in Japan
Volume	5
Issue number	12
DOIs	https://doi.org/10.1109/TJMJ.1990.4564413
Publication status	Published - 1990 Dec

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title = "Magnetoresistance and Hall effects of Fe-Ni-M alloy thin films",

abstract = "The relations between the anisotropic magnetoresistivity ratio Δρ/ρ0, the ordinary Hall coefficient R0, and the extraordinary Hall coefficient Rs were studied for Ni-Fe binary alloy and for (Ni89.5Fe10.5) M (M = Co, Cu, Nb, Gd, Al, Si, and Bi) ternary alloy thin films, to obtain guidelines in searching for new materials with large values of Δρ/ρ0. It is found that the value of Δρ/ρ0 increases with increases in the absolute value of R0, and also shows a maximum (Δρ/ρ0 ≈ 4%) at RS = 0. For ferromagnetic metals, a large value of Δρ/ρ0 can be obtained under the following conditions: (1) the sign of R0 is negative and the absolute value of R0 is large (carriers are electron-like and the effective carrier density ηeff is small), and (2) Rs is zero. Sample preparation and experimental procedure are described, and the results are discussed.",

author = "T. Tanaka and I. Kobayashi and M. Takahashi and M. Kunii and T. Wakiyama",

year = "1990",

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AU - Tanaka, T.

AU - Kobayashi, I.

AU - Takahashi, M.

AU - Kunii, M.

AU - Wakiyama, T.

PY - 1990/12

Y1 - 1990/12

N2 - The relations between the anisotropic magnetoresistivity ratio Δρ/ρ0, the ordinary Hall coefficient R0, and the extraordinary Hall coefficient Rs were studied for Ni-Fe binary alloy and for (Ni89.5Fe10.5) M (M = Co, Cu, Nb, Gd, Al, Si, and Bi) ternary alloy thin films, to obtain guidelines in searching for new materials with large values of Δρ/ρ0. It is found that the value of Δρ/ρ0 increases with increases in the absolute value of R0, and also shows a maximum (Δρ/ρ0 ≈ 4%) at RS = 0. For ferromagnetic metals, a large value of Δρ/ρ0 can be obtained under the following conditions: (1) the sign of R0 is negative and the absolute value of R0 is large (carriers are electron-like and the effective carrier density ηeff is small), and (2) Rs is zero. Sample preparation and experimental procedure are described, and the results are discussed.

AB - The relations between the anisotropic magnetoresistivity ratio Δρ/ρ0, the ordinary Hall coefficient R0, and the extraordinary Hall coefficient Rs were studied for Ni-Fe binary alloy and for (Ni89.5Fe10.5) M (M = Co, Cu, Nb, Gd, Al, Si, and Bi) ternary alloy thin films, to obtain guidelines in searching for new materials with large values of Δρ/ρ0. It is found that the value of Δρ/ρ0 increases with increases in the absolute value of R0, and also shows a maximum (Δρ/ρ0 ≈ 4%) at RS = 0. For ferromagnetic metals, a large value of Δρ/ρ0 can be obtained under the following conditions: (1) the sign of R0 is negative and the absolute value of R0 is large (carriers are electron-like and the effective carrier density ηeff is small), and (2) Rs is zero. Sample preparation and experimental procedure are described, and the results are discussed.

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Magnetoresistance and Hall effects of Fe-Ni-M alloy thin films

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