Magnetoresistance and de Haas-van Alphen effect in U3As4 and U3P4

Yoshihiko Inada, Piotr Wiśniewski, Masao Murakawa, Dai Aoki, Kousaku Miyake, Narumi Watanabe, Yoshinori Haga, Etsuji Yamamoto, Yoshichika Onuki

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We measured the transverse magnetoresistance and de Haas-van Alphen (dHvA) oscillation in the ferromagnetic compounds U3As4 and U3P4. The magnet oresistance in both compounds increases as a function of Hn (n ≃ 2) in a wide angular region, indicating that U3As4 and U3P4 are compensated metals. As for U3P4. the angular dependence of the magnetoresistance shows clearly dips for particular field directions. This implies the existence of a multiply-connected Fermi surface which favors open orbits along the 〈110〉 and 〈112〉 directions. We also detected several dHvA branches in U3As4 and U3P4. Most of them are due to the closed Fermi surfaces, which are explained by recent results of fully relativistic spin-polarized LMTO band calculations. The cyclotron effective mass is large, ranging from 5 to 70 m0, and consistent with the electronic specific heat coefficient of 83mJ/K2·mol in U3As4 and 90 mj/K2·mol in U3P4.

Original languageEnglish
Pages (from-to)558-568
Number of pages11
Journaljournal of the physical society of japan
Volume70
Issue number2
DOIs
Publication statusPublished - 2001 Feb 1
Externally publishedYes

Keywords

  • Fermi surface
  • Magnetoresistance
  • Specific heat
  • UAs
  • UP
  • dHvA

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Inada, Y., Wiśniewski, P., Murakawa, M., Aoki, D., Miyake, K., Watanabe, N., Haga, Y., Yamamoto, E., & Onuki, Y. (2001). Magnetoresistance and de Haas-van Alphen effect in U3As4 and U3P4. journal of the physical society of japan, 70(2), 558-568. https://doi.org/10.1143/JPSJ.70.558