Magnetoluminescence of light-emitting field-effect transistors based on alpha sexithiophene

Song Toan Pham, Hirokazu Tada

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    7 Citations (Scopus)

    Abstract

    We demonstrated the effect of a magnetic field on the luminous intensity and electric current of light-emitting field-effect transistors (LEFETs) based on alpha sexithiophene (α-6T). Sublimate-grade α-6T was thermally deposited on an n+-Si/300nm-SiO2 substrate with patterned asymmetric gold-aluminum electrodes to fabricate a bottom-contact LEFET. We observed an increase in luminous intensity of approximately 1.3% under a magnetic field of 100mT. A possible explanation for this is that the magnetic field increased the probability of singlet formation at the α-6T/Al interface. While the magneto-electroluminescence (MEL) was reported to be derived from the magneto-conductance (MC) in ordinary light emitting diodes, the MEL in LEFET was independent with MC. This indicates that the luminous efficiency can be improved by optimizing the magnetic field effect.

    Original languageEnglish
    Article number133301
    JournalApplied Physics Letters
    Volume104
    Issue number13
    DOIs
    Publication statusPublished - 2014 Mar 31

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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