TY - JOUR
T1 - Magnetoelectric Switching Energy of Antiferromagnetic Cr2O3 Used for Spintronic Logic Devices and Memory
AU - Ye, Shujun
N1 - Funding Information:
This work was supported by JSPS KAKENHI grant no. JP20K14772.
Publisher Copyright:
© 2021 Wiley-VCH GmbH.
PY - 2022/1
Y1 - 2022/1
N2 - Magnetoelectric (ME) switching energy is the most important aspect in the practical application of antiferromagnetic (AFM) Cr2O3-based perpendicular exchange-coupling heterostructures, but it is not fully understood. This study firstly clarifies the relation between the applied magnetic/electric field and surface spin directions (domain status) as well as the perpendicular exchange bias sign in this system. Secondly, the asymmetric ME switching behavior for both Cr2O3 and its perpendicular exchange-coupling heterostructures is discussed. Finally, a model is developed to examine the energy required during the ME switching of the above system. It was found that the surface status and microstructure of Cr2O3 are essential factors influencing the system's ME switching energy. This work contributes to realizing low-energy information writing for AFM Cr2O3 used in spintronic logic devices and memory.
AB - Magnetoelectric (ME) switching energy is the most important aspect in the practical application of antiferromagnetic (AFM) Cr2O3-based perpendicular exchange-coupling heterostructures, but it is not fully understood. This study firstly clarifies the relation between the applied magnetic/electric field and surface spin directions (domain status) as well as the perpendicular exchange bias sign in this system. Secondly, the asymmetric ME switching behavior for both Cr2O3 and its perpendicular exchange-coupling heterostructures is discussed. Finally, a model is developed to examine the energy required during the ME switching of the above system. It was found that the surface status and microstructure of Cr2O3 are essential factors influencing the system's ME switching energy. This work contributes to realizing low-energy information writing for AFM Cr2O3 used in spintronic logic devices and memory.
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U2 - 10.1002/pssr.202100396
DO - 10.1002/pssr.202100396
M3 - Article
AN - SCOPUS:85116462668
VL - 16
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
SN - 1862-6254
IS - 1
M1 - 2100396
ER -