Electrically controllable antiferromagnets will play a prominent role in the development of future spintronics. These materials offer a way to realize innovative low-energy-consumption, high-speed, highly integrated spintronic devices for storage, memory, and logic use. The magnetoelectric manipulation of antiferromagnetic spin in Cr2O3 is one of the most promising ways to achieve such devices. Crucial problems toward device applications are 1) the establishment of high-quality Cr2O3 thin-film fabrication techniques and the demonstration of the adaptability of such films for high-performance devices, and 2) the enhancement of the operating temperature in order to ensure sufficient stability for room-temperature operations. In this review, we summarize the recent progress made in Cr2O3 thin-film research, especially focusing on the magnetoelectric manipulation of antiferromagnetic spin and material development for achieving a higher operating temperature in Cr2O3 thin films.
ASJC Scopus subject areas
- Physics and Astronomy(all)