Magnetoelectric domain wall dynamics and its implications for magnetoelectric memory

K. D. Belashchenko, O. Tchernyshyov, Alexey A. Kovalev, O. A. Tretiakov

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33 Citations (Scopus)

Abstract

Domain wall dynamics in a magnetoelectric antiferromagnet is analyzed, and its implications for magnetoelectric memory applications are discussed. Cr2O3 is used in the estimates of the materials parameters. It is found that the domain wall mobility has a maximum as a function of the electric field due to the gyrotropic coupling induced by it. In Cr2O3, the maximal mobility of 0.1 m/(s Oe) is reached at E≈0.06 V/nm. Fields of this order may be too weak to overcome the intrinsic depinning field, which is estimated for B-doped Cr2O3. These major drawbacks for device implementation can be overcome by applying a small in-plane shear strain, which blocks the domain wall precession. Domain wall mobility of about 0.7 m/(s Oe) can then be achieved at E = 0.2 V/nm. A split-gate scheme is proposed for the domain-wall controlled bit element; its extension to multiple-gate linear arrays can offer advantages in memory density, programmability, and logic functionality.

Original languageEnglish
Article number132403
JournalApplied Physics Letters
Volume108
Issue number13
DOIs
Publication statusPublished - 2016 Mar 28

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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  • Cite this

    Belashchenko, K. D., Tchernyshyov, O., Kovalev, A. A., & Tretiakov, O. A. (2016). Magnetoelectric domain wall dynamics and its implications for magnetoelectric memory. Applied Physics Letters, 108(13), [132403]. https://doi.org/10.1063/1.4944996