Magneto-electrical transport in V-patterned La0.7Sr 0.3MnO3 nanostructures

L. E. Calvet, G. Agnus, Y. Vaheb, Y. C. Lau, V. Pillard, Ph Lecoeur

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

We investigate the electrical transport and magnetic field dependence of nano-patterned La0.7Sr0.3MnO3 devices. We find that the resistivity versus temperature dependence is the same as that observed in thin films, indicating that our nano-patterning preserves the fundamental properties of the material. At temperatures below 20 K there is resistivity upturn of ∼ 5 % in the smallest and thinnest device. Structures in a "V" pattern were fabricated in order to investigate domain wall resistance. We find a much smaller resistance area product as compared to previous reports observed in nanoconstrictions and also that the switching field matches that in micromagnetic simulations.

Original languageEnglish
Pages (from-to)4600-4603
Number of pages4
JournalThin Solid Films
Volume520
Issue number14
DOIs
Publication statusPublished - 2012 May 1
Externally publishedYes

Keywords

  • Domain walls
  • Half metallic manganites
  • Magneto-resistance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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