Abstract
We investigate the electrical transport and magnetic field dependence of nano-patterned La0.7Sr0.3MnO3 devices. We find that the resistivity versus temperature dependence is the same as that observed in thin films, indicating that our nano-patterning preserves the fundamental properties of the material. At temperatures below 20 K there is resistivity upturn of ∼ 5 % in the smallest and thinnest device. Structures in a "V" pattern were fabricated in order to investigate domain wall resistance. We find a much smaller resistance area product as compared to previous reports observed in nanoconstrictions and also that the switching field matches that in micromagnetic simulations.
Original language | English |
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Pages (from-to) | 4600-4603 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 520 |
Issue number | 14 |
DOIs | |
Publication status | Published - 2012 May 1 |
Externally published | Yes |
Keywords
- Domain walls
- Half metallic manganites
- Magneto-resistance
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry