Magneto-electrical transport in V-patterned La0.7Sr 0.3MnO3 nanostructures

L. E. Calvet; G. Agnus; Y. Vaheb; Y. C. Lau; V. Pillard; Ph Lecoeur

doi:10.1016/j.tsf.2011.11.071

Magneto-electrical transport in V-patterned La_0.7Sr _0.3MnO₃ nanostructures

L. E. Calvet, G. Agnus, Y. Vaheb, Y. C. Lau, V. Pillard, Ph Lecoeur

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We investigate the electrical transport and magnetic field dependence of nano-patterned La_0.7Sr_0.3MnO₃ devices. We find that the resistivity versus temperature dependence is the same as that observed in thin films, indicating that our nano-patterning preserves the fundamental properties of the material. At temperatures below 20 K there is resistivity upturn of ∼ 5 % in the smallest and thinnest device. Structures in a "V" pattern were fabricated in order to investigate domain wall resistance. We find a much smaller resistance area product as compared to previous reports observed in nanoconstrictions and also that the switching field matches that in micromagnetic simulations.

Original language	English
Pages (from-to)	4600-4603
Number of pages	4
Journal	Thin Solid Films
Volume	520
Issue number	14
DOIs	https://doi.org/10.1016/j.tsf.2011.11.071
Publication status	Published - 2012 May 1
Externally published	Yes

Keywords

Domain walls
Half metallic manganites
Magneto-resistance

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2011.11.071

Cite this

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title = "Magneto-electrical transport in V-patterned La0.7Sr 0.3MnO3 nanostructures",

abstract = "We investigate the electrical transport and magnetic field dependence of nano-patterned La0.7Sr0.3MnO3 devices. We find that the resistivity versus temperature dependence is the same as that observed in thin films, indicating that our nano-patterning preserves the fundamental properties of the material. At temperatures below 20 K there is resistivity upturn of ∼ 5 % in the smallest and thinnest device. Structures in a {"}V{"} pattern were fabricated in order to investigate domain wall resistance. We find a much smaller resistance area product as compared to previous reports observed in nanoconstrictions and also that the switching field matches that in micromagnetic simulations.",

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author = "Calvet, {L. E.} and G. Agnus and Y. Vaheb and Lau, {Y. C.} and V. Pillard and Ph Lecoeur",

note = "Funding Information: This research was partially funded by Triangle de la Physique (RTRA) contract MolSpinOx # 2008-022T and CNRS PICS#4276 .",

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T1 - Magneto-electrical transport in V-patterned La0.7Sr 0.3MnO3 nanostructures

AU - Calvet, L. E.

AU - Agnus, G.

AU - Vaheb, Y.

AU - Lau, Y. C.

AU - Pillard, V.

AU - Lecoeur, Ph

N1 - Funding Information: This research was partially funded by Triangle de la Physique (RTRA) contract MolSpinOx # 2008-022T and CNRS PICS#4276 .

PY - 2012/5/1

Y1 - 2012/5/1

N2 - We investigate the electrical transport and magnetic field dependence of nano-patterned La0.7Sr0.3MnO3 devices. We find that the resistivity versus temperature dependence is the same as that observed in thin films, indicating that our nano-patterning preserves the fundamental properties of the material. At temperatures below 20 K there is resistivity upturn of ∼ 5 % in the smallest and thinnest device. Structures in a "V" pattern were fabricated in order to investigate domain wall resistance. We find a much smaller resistance area product as compared to previous reports observed in nanoconstrictions and also that the switching field matches that in micromagnetic simulations.

AB - We investigate the electrical transport and magnetic field dependence of nano-patterned La0.7Sr0.3MnO3 devices. We find that the resistivity versus temperature dependence is the same as that observed in thin films, indicating that our nano-patterning preserves the fundamental properties of the material. At temperatures below 20 K there is resistivity upturn of ∼ 5 % in the smallest and thinnest device. Structures in a "V" pattern were fabricated in order to investigate domain wall resistance. We find a much smaller resistance area product as compared to previous reports observed in nanoconstrictions and also that the switching field matches that in micromagnetic simulations.

KW - Domain walls

KW - Half metallic manganites

KW - Magneto-resistance

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