TY - JOUR
T1 - Magnetization switching schemes for nanoscale three-terminal spintronics devices
AU - Fukami, Shunsuke
AU - Ohno, Hideo
N1 - Publisher Copyright:
© 2017 The Japan Society of Applied Physics.
PY - 2017/8
Y1 - 2017/8
N2 - Utilizing spintronics-based nonvolatile memories in integrated circuits offers a promising approach to realize ultralow-power and high-performance electronics. While two-terminal devices with spin-transfer torque switching have been extensively developed nowadays, there has been a growing interest in devices with a three-terminal structure. Of primary importance for applications is the efficient manipulation of magnetization, corresponding to information writing, in nanoscale devices. Here we review the studies of current-induced domain wall motion and spin-orbit torque-induced switching, which can be applied to the write operation of nanoscale three-terminal spintronics devices. For domain wall motion, the size dependence of device properties down to less than 20nm will be shown and the underlying mechanism behind the results will be discussed. For spin-orbit torque-induced switching, factors governing the threshold current density and strategies to reduce it will be discussed. A proof-ofconcept demonstration of artificial intelligence using an analog spin-orbit torque device will also be reviewed.
AB - Utilizing spintronics-based nonvolatile memories in integrated circuits offers a promising approach to realize ultralow-power and high-performance electronics. While two-terminal devices with spin-transfer torque switching have been extensively developed nowadays, there has been a growing interest in devices with a three-terminal structure. Of primary importance for applications is the efficient manipulation of magnetization, corresponding to information writing, in nanoscale devices. Here we review the studies of current-induced domain wall motion and spin-orbit torque-induced switching, which can be applied to the write operation of nanoscale three-terminal spintronics devices. For domain wall motion, the size dependence of device properties down to less than 20nm will be shown and the underlying mechanism behind the results will be discussed. For spin-orbit torque-induced switching, factors governing the threshold current density and strategies to reduce it will be discussed. A proof-ofconcept demonstration of artificial intelligence using an analog spin-orbit torque device will also be reviewed.
UR - http://www.scopus.com/inward/record.url?scp=85026491048&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85026491048&partnerID=8YFLogxK
U2 - 10.7567/JJAP.56.0802A1
DO - 10.7567/JJAP.56.0802A1
M3 - Review article
AN - SCOPUS:85026491048
VL - 56
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 8
M1 - 0802A1
ER -