Magnetization reversal process of submicrometer-scale hall bars of ferromagnetic semiconductor p-In0.97Mn0.03As

Yoshiaki Sekine; Junsaku Nitta; Takaaki Koga; Akira Oiwa; Satoshi Yanagi; Tomasz Slupinski; Hiroo Munekata

doi:10.1143/JJAP.43.2097

Magnetization reversal process of submicrometer-scale hall bars of ferromagnetic semiconductor p-In_0.97Mn_0.03As

Yoshiaki Sekine, Junsaku Nitta, Takaaki Koga, Akira Oiwa, Satoshi Yanagi, Tomasz Slupinski, Hiroo Munekata

Research output: Contribution to journal › Article

Abstract

The magnetization reversal process of submicrometer-scale Hall bars of the ferromagnetic semiconductor p-In_0.97Mn_0.03As has been investigated by measuring the Hall resistivity with changing the direction of the applied magnetic field. The angle dependence of the coercive force indicates that the magnetization reversal process is more likely governed by the magnetic domain wall displacement. Furthermore, observation of several Barkhausen jumps on a 0.7-μm-wide Hall bar makes it clear that p-Ino_0.97Mn _0.03As has a small-domain-sized multidomain structure near the coercive force. It is also shown that p-In_0.97Mn_0.03As has an ideal uniaxial magnetic easy axis perpendicular to the plane. The magnetization reversal process of p-In_0.97Mn_0.03As is distinct from that of a similar ferromagnetic semiconductor p-Ga _1-xMn_xAs.

Original language	English
Pages (from-to)	2097-2100
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	43
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.43.2097
Publication status	Published - 2004 Apr
Externally published	Yes

Keywords

Ferromagnetic semiconductor
InMnAs
Magnetic anisotropy
Magnetization process
Submicrometer-scale magnet

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Sekine, Y., Nitta, J., Koga, T., Oiwa, A., Yanagi, S., Slupinski, T., & Munekata, H. (2004). Magnetization reversal process of submicrometer-scale hall bars of ferromagnetic semiconductor p-In_0.97Mn_0.03As. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 43(4 B), 2097-2100. https://doi.org/10.1143/JJAP.43.2097

Magnetization reversal process of submicrometer-scale hall bars of ferromagnetic semiconductor p-In_0.97Mn_0.03As. / Sekine, Yoshiaki; Nitta, Junsaku; Koga, Takaaki; Oiwa, Akira; Yanagi, Satoshi; Slupinski, Tomasz; Munekata, Hiroo.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 4 B, 04.2004, p. 2097-2100.

Research output: Contribution to journal › Article

Sekine, Yoshiaki ; Nitta, Junsaku ; Koga, Takaaki ; Oiwa, Akira ; Yanagi, Satoshi ; Slupinski, Tomasz ; Munekata, Hiroo. / Magnetization reversal process of submicrometer-scale hall bars of ferromagnetic semiconductor p-In_0.97Mn_0.03As. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2004 ; Vol. 43, No. 4 B. pp. 2097-2100.

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title = "Magnetization reversal process of submicrometer-scale hall bars of ferromagnetic semiconductor p-In0.97Mn0.03As",

abstract = "The magnetization reversal process of submicrometer-scale Hall bars of the ferromagnetic semiconductor p-In0.97Mn0.03As has been investigated by measuring the Hall resistivity with changing the direction of the applied magnetic field. The angle dependence of the coercive force indicates that the magnetization reversal process is more likely governed by the magnetic domain wall displacement. Furthermore, observation of several Barkhausen jumps on a 0.7-μm-wide Hall bar makes it clear that p-Ino0.97Mn 0.03As has a small-domain-sized multidomain structure near the coercive force. It is also shown that p-In0.97Mn0.03As has an ideal uniaxial magnetic easy axis perpendicular to the plane. The magnetization reversal process of p-In0.97Mn0.03As is distinct from that of a similar ferromagnetic semiconductor p-Ga 1-xMnxAs.",

keywords = "Ferromagnetic semiconductor, InMnAs, Magnetic anisotropy, Magnetization process, Submicrometer-scale magnet",

author = "Yoshiaki Sekine and Junsaku Nitta and Takaaki Koga and Akira Oiwa and Satoshi Yanagi and Tomasz Slupinski and Hiroo Munekata",

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AU - Oiwa, Akira

AU - Yanagi, Satoshi

AU - Slupinski, Tomasz

AU - Munekata, Hiroo

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N2 - The magnetization reversal process of submicrometer-scale Hall bars of the ferromagnetic semiconductor p-In0.97Mn0.03As has been investigated by measuring the Hall resistivity with changing the direction of the applied magnetic field. The angle dependence of the coercive force indicates that the magnetization reversal process is more likely governed by the magnetic domain wall displacement. Furthermore, observation of several Barkhausen jumps on a 0.7-μm-wide Hall bar makes it clear that p-Ino0.97Mn 0.03As has a small-domain-sized multidomain structure near the coercive force. It is also shown that p-In0.97Mn0.03As has an ideal uniaxial magnetic easy axis perpendicular to the plane. The magnetization reversal process of p-In0.97Mn0.03As is distinct from that of a similar ferromagnetic semiconductor p-Ga 1-xMnxAs.

AB - The magnetization reversal process of submicrometer-scale Hall bars of the ferromagnetic semiconductor p-In0.97Mn0.03As has been investigated by measuring the Hall resistivity with changing the direction of the applied magnetic field. The angle dependence of the coercive force indicates that the magnetization reversal process is more likely governed by the magnetic domain wall displacement. Furthermore, observation of several Barkhausen jumps on a 0.7-μm-wide Hall bar makes it clear that p-Ino0.97Mn 0.03As has a small-domain-sized multidomain structure near the coercive force. It is also shown that p-In0.97Mn0.03As has an ideal uniaxial magnetic easy axis perpendicular to the plane. The magnetization reversal process of p-In0.97Mn0.03As is distinct from that of a similar ferromagnetic semiconductor p-Ga 1-xMnxAs.

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