The switching field behavior and remanent magnetization configuration for single films and synthetic antiferromagnets were calculated. The samples used in this study were deposited with ion beam sputtering and patterned using electron beam lithography. The results showed that the switching field increased with increasing the aspect ratio because of shape anisotropy.
|Journal||Digests of the Intermag Conference|
|Publication status||Published - 2002 Dec 1|
|Event||2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG - Amsterdam, Netherlands|
Duration: 2002 Apr 28 → 2002 May 2
ASJC Scopus subject areas
- Electrical and Electronic Engineering