21 Citations (Scopus)


We investigate in-plane current-induced magnetization reversal under an in-plane magnetic field in Hall bar shaped devices composed of Ta/CoFeB/MgO structures with perpendicular magnetic easy axis. The observed relationship between the directions of current and magnetization switching and Ta thickness dependence of magnetization switching current are accordance with those for magnetization reversal by spin transfer torque originated from the spin Hall effect in the Ta layer.

Original languageEnglish
Article number17C714
JournalJournal of Applied Physics
Issue number17
Publication statusPublished - 2014 May 7

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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