Magnetization process and domains in MTJ

M. Czapkiewicz, M. Zoladz, J. Wrona, P. Wisniowski, R. Rak, T. Stobiecki, C. G. Kim, C. O. Kim, Migaku Takahashi, M. Tsunoda

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4 Citations (Scopus)

Abstract

The magnetization process and domain structure of free layers in as deposited and annealed magnetic tunnel junctions (MTJ) of Si/Ta/Cu/Ta/NiFe/Cu/IrMn(10)/CoFe(2.5)/Al-O(1.5)/CoFe(2.5)/NiFe(t)/Ta, where t = 10, 30 and 100 nm, were investigated by Kerr microscopy, R-VSM and MOKE magnetometers. Different types of domain patterns observed in free layers (CoFe(2.5)/NiFe(t)) depending on the mutual relation between interlayer coupling energy and free layer magnetostatic energy. For as deposited samples fuzzy domains with fine irregular "patches" pattern, typical for weak interlayer coupling, are observed. Annealed MTJs, however, are characterized by large domains superimposed by crossed stripes, which led to the blocking of coherent rotation of magnetization.

Original languageEnglish
Pages (from-to)1477-1481
Number of pages5
JournalPhysica Status Solidi (B) Basic Research
Volume241
Issue number7
DOIs
Publication statusPublished - 2004 Jun 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Czapkiewicz, M., Zoladz, M., Wrona, J., Wisniowski, P., Rak, R., Stobiecki, T., Kim, C. G., Kim, C. O., Takahashi, M., & Tsunoda, M. (2004). Magnetization process and domains in MTJ. Physica Status Solidi (B) Basic Research, 241(7), 1477-1481. https://doi.org/10.1002/pssb.200304668