Magnetization control for bit pattern formation of spinel ferromagnetic oxides by Kr ion implantation

Eiji Kita; Kazuya Z. Suzuki; Yang Liu; Yuji Utsumi; Jumpei Morishita; Daiki Oshima; Takeshi Kato; Tomohiko Niizeki; Ko Mibu; Hideto Yanagihara

doi:10.1063/1.4868704

Magnetization control for bit pattern formation of spinel ferromagnetic oxides by Kr ion implantation

Eiji Kita, Kazuya Z. Suzuki, Yang Liu, Yuji Utsumi, Jumpei Morishita, Daiki Oshima, Takeshi Kato, Tomohiko Niizeki, Ko Mibu, Hideto Yanagihara

Advanced Institute for Materials Research (AIMR)

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

As a first step toward the development of bit-patterned magnetic media made of oxides, we investigated the effectiveness of magnetism control by Kr implantation in a typical spinel ferromagnetic oxide, Fe₃O ₄. We implanted Kr ions accelerated at 30kV on 13-nm-thick Fe ₃O₄ thin films at dosages of (1-40)×10¹⁴ ions/cm². Magnetization decreased with increase in ion dosages and disappeared when irradiation was greater than 2×10¹⁵ ions/cm² of Kr ions. These dosages are more than ten times smaller than that used in the N₂ implantation for metallic and oxide ferromagnets. Both the temperature dependence of magnetization and the Mössbauer study suggest that the transition of Fe₃O₄ from ferromagnetic to paramagnetic took place sharply due to Kr ion irradiation, which produces two-phase separation - ferromagnetic and nonmagnetic with insufficient dosage of Kr ions.

Original language	English
Article number	17B907
Journal	Journal of Applied Physics
Volume	115
Issue number	17
DOIs	https://doi.org/10.1063/1.4868704
Publication status	Published - 2014 May 7

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.4868704

Fingerprint Dive into the research topics of 'Magnetization control for bit pattern formation of spinel ferromagnetic oxides by Kr ion implantation'. Together they form a unique fingerprint.

Cite this

Magnetization control for bit pattern formation of spinel ferromagnetic oxides by Kr ion implantation. / Kita, Eiji; Suzuki, Kazuya Z.; Liu, Yang; Utsumi, Yuji; Morishita, Jumpei; Oshima, Daiki; Kato, Takeshi; Niizeki, Tomohiko; Mibu, Ko; Yanagihara, Hideto.

In: Journal of Applied Physics, Vol. 115, No. 17, 17B907, 07.05.2014.

Research output: Contribution to journal › Article › peer-review

@article{90ae8b33b00d44a580152bd1d3f063c3,

title = "Magnetization control for bit pattern formation of spinel ferromagnetic oxides by Kr ion implantation",

abstract = "As a first step toward the development of bit-patterned magnetic media made of oxides, we investigated the effectiveness of magnetism control by Kr implantation in a typical spinel ferromagnetic oxide, Fe3O 4. We implanted Kr ions accelerated at 30kV on 13-nm-thick Fe 3O4 thin films at dosages of (1-40)×1014 ions/cm2. Magnetization decreased with increase in ion dosages and disappeared when irradiation was greater than 2×1015 ions/cm2 of Kr ions. These dosages are more than ten times smaller than that used in the N2 implantation for metallic and oxide ferromagnets. Both the temperature dependence of magnetization and the M{\"o}ssbauer study suggest that the transition of Fe3O4 from ferromagnetic to paramagnetic took place sharply due to Kr ion irradiation, which produces two-phase separation - ferromagnetic and nonmagnetic with insufficient dosage of Kr ions.",

author = "Eiji Kita and Suzuki, {Kazuya Z.} and Yang Liu and Yuji Utsumi and Jumpei Morishita and Daiki Oshima and Takeshi Kato and Tomohiko Niizeki and Ko Mibu and Hideto Yanagihara",

year = "2014",

month = may,

day = "7",

doi = "10.1063/1.4868704",

language = "English",

volume = "115",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "17",

}

TY - JOUR

T1 - Magnetization control for bit pattern formation of spinel ferromagnetic oxides by Kr ion implantation

AU - Kita, Eiji

AU - Suzuki, Kazuya Z.

AU - Liu, Yang

AU - Utsumi, Yuji

AU - Morishita, Jumpei

AU - Oshima, Daiki

AU - Kato, Takeshi

AU - Niizeki, Tomohiko

AU - Mibu, Ko

AU - Yanagihara, Hideto

PY - 2014/5/7

Y1 - 2014/5/7

N2 - As a first step toward the development of bit-patterned magnetic media made of oxides, we investigated the effectiveness of magnetism control by Kr implantation in a typical spinel ferromagnetic oxide, Fe3O 4. We implanted Kr ions accelerated at 30kV on 13-nm-thick Fe 3O4 thin films at dosages of (1-40)×1014 ions/cm2. Magnetization decreased with increase in ion dosages and disappeared when irradiation was greater than 2×1015 ions/cm2 of Kr ions. These dosages are more than ten times smaller than that used in the N2 implantation for metallic and oxide ferromagnets. Both the temperature dependence of magnetization and the Mössbauer study suggest that the transition of Fe3O4 from ferromagnetic to paramagnetic took place sharply due to Kr ion irradiation, which produces two-phase separation - ferromagnetic and nonmagnetic with insufficient dosage of Kr ions.

AB - As a first step toward the development of bit-patterned magnetic media made of oxides, we investigated the effectiveness of magnetism control by Kr implantation in a typical spinel ferromagnetic oxide, Fe3O 4. We implanted Kr ions accelerated at 30kV on 13-nm-thick Fe 3O4 thin films at dosages of (1-40)×1014 ions/cm2. Magnetization decreased with increase in ion dosages and disappeared when irradiation was greater than 2×1015 ions/cm2 of Kr ions. These dosages are more than ten times smaller than that used in the N2 implantation for metallic and oxide ferromagnets. Both the temperature dependence of magnetization and the Mössbauer study suggest that the transition of Fe3O4 from ferromagnetic to paramagnetic took place sharply due to Kr ion irradiation, which produces two-phase separation - ferromagnetic and nonmagnetic with insufficient dosage of Kr ions.

UR - http://www.scopus.com/inward/record.url?scp=84903887447&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84903887447&partnerID=8YFLogxK

U2 - 10.1063/1.4868704

DO - 10.1063/1.4868704

M3 - Article

AN - SCOPUS:84903887447

VL - 115

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 17

M1 - 17B907

ER -