Magnetization control for bit pattern formation of spinel ferromagnetic oxides by Kr ion implantation

Eiji Kita, Kazuya Z. Suzuki, Yang Liu, Yuji Utsumi, Jumpei Morishita, Daiki Oshima, Takeshi Kato, Tomohiko Niizeki, Ko Mibu, Hideto Yanagihara

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1 Citation (Scopus)

Abstract

As a first step toward the development of bit-patterned magnetic media made of oxides, we investigated the effectiveness of magnetism control by Kr implantation in a typical spinel ferromagnetic oxide, Fe3O 4. We implanted Kr ions accelerated at 30kV on 13-nm-thick Fe 3O4 thin films at dosages of (1-40)×1014 ions/cm2. Magnetization decreased with increase in ion dosages and disappeared when irradiation was greater than 2×1015 ions/cm2 of Kr ions. These dosages are more than ten times smaller than that used in the N2 implantation for metallic and oxide ferromagnets. Both the temperature dependence of magnetization and the Mössbauer study suggest that the transition of Fe3O4 from ferromagnetic to paramagnetic took place sharply due to Kr ion irradiation, which produces two-phase separation - ferromagnetic and nonmagnetic with insufficient dosage of Kr ions.

Original languageEnglish
Article number17B907
JournalJournal of Applied Physics
Volume115
Issue number17
DOIs
Publication statusPublished - 2014 May 7

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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