TY - GEN
T1 - Magnetization chirality of Ni-Fe and Ni-Fe/Mn-Ir asymmetric ring dots for high-density memory cells
AU - Sasaki, Isao
AU - Nakatani, Ryoichi
AU - Yoshida, Tetsuo
AU - Otaki, Keiichi
AU - Endo, Yasushi
AU - Kawamura, Yoshio
AU - Yamamoto, Masahiko
AU - Takenaga, Takashi
AU - Aya, Sunao
AU - Kuroiwa, Takeharu
AU - Beysen, Sadeh
AU - Kobayashi, Hiroshi
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2006
Y1 - 2006
N2 - The magnetic configurations of Ni-20at%Fe/Hf and Ta/Ni-20at%Fe/Mn-28at%Ir/ Ni-20at%Fe/Ta asymmetric ring dots have been studied. Recently, we proposed that asymmetric ring structures are suitable for magnetic memory cells and then demonstrated that asymmetric structures can control the chirality of the vortical magnetization with in-plane fields. The investigation of the Ni-20at%Fe(20 nm)/Hf(5 nm) asymmetric ring dots for free layers in magnetic memory cells demonstrated that switching fields cause a transition from the vortex state to the onion state that increases as the ring width decreases from 410 nm to 210 nm since a narrow ring has a higher demagnetizing field than that of a wide ring during the transition. The investigation of the Ta(3 nm)/Ni-20at%Fe(15 nm)/Mn-28at%Ir(10 nm)/Ni-20at%Fe(3 nm)/Ta(5 nm) asymmetric ring dots for the pinned layers in magnetic memory cells demonstrated that the chirality of the vortical magnetization is pinned regardless of the magnetic field direction.
AB - The magnetic configurations of Ni-20at%Fe/Hf and Ta/Ni-20at%Fe/Mn-28at%Ir/ Ni-20at%Fe/Ta asymmetric ring dots have been studied. Recently, we proposed that asymmetric ring structures are suitable for magnetic memory cells and then demonstrated that asymmetric structures can control the chirality of the vortical magnetization with in-plane fields. The investigation of the Ni-20at%Fe(20 nm)/Hf(5 nm) asymmetric ring dots for free layers in magnetic memory cells demonstrated that switching fields cause a transition from the vortex state to the onion state that increases as the ring width decreases from 410 nm to 210 nm since a narrow ring has a higher demagnetizing field than that of a wide ring during the transition. The investigation of the Ta(3 nm)/Ni-20at%Fe(15 nm)/Mn-28at%Ir(10 nm)/Ni-20at%Fe(3 nm)/Ta(5 nm) asymmetric ring dots for the pinned layers in magnetic memory cells demonstrated that the chirality of the vortical magnetization is pinned regardless of the magnetic field direction.
KW - Magnetic force microscopy
KW - Magnetic memory
KW - Magnetization reversal
KW - Ring dots
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U2 - 10.4028/0-87849-996-2.171
DO - 10.4028/0-87849-996-2.171
M3 - Conference contribution
AN - SCOPUS:35748980282
SN - 0878499962
SN - 9780878499960
T3 - Materials Science Forum
SP - 171
EP - 176
BT - Advanced Structural and Functional Materials Design - Proceedings of the International Symposium on Advanced Structural and Functional Materials Design, 2004
PB - Trans Tech Publications Ltd
T2 - International Symposium on Advanced Structural and Functional Materials Design, 2004
Y2 - 10 November 2004 through 12 November 2004
ER -