Magnetically pinned ring dots for spin valve or magnetic tunnel junction memory cells

Ryoichi Nakatani, Tetsuo Yoshida, Yasushi Endo, Yoshio Kawamura, Masahiko Yamamoto, Takashi Takenaga, Sunao Aya, Takeharu Kuroiwa, Sadeh Beysen, Hiroshi Kobayashi

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

Ni-Fe/Mn-Ir asymmetric ring dots with partially planed outer sides are investigated in order to confirm a method for obtaining pinned layers in magnetic memories with asymmetric ring shapes. Magnetic force microscopy revealed that the direction of vortical magnetization is pinned in Ni-Fe/Mn-Ir asymmetric ring dots despite the direction of the magnetic fields. This investigation shows that the Ni-Fe/Mn-Ir asymmetric ring dots can be applied to pinned layers in magnetic memories with asymmetric ring shapes.

Original languageEnglish
Pages (from-to)31-36
Number of pages6
JournalJournal of Magnetism and Magnetic Materials
Volume286
Issue numberSPEC. ISS.
DOIs
Publication statusPublished - 2005 Feb
Externally publishedYes

Keywords

  • Antiferromagnetic layer
  • Magnetic force microscopy
  • Magnetic memory
  • Magnetization reversal

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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