Magnetically pinned ring dots for spin valve or magnetic tunnel junction memory cells

Ryoichi Nakatani; Tetsuo Yoshida; Yasushi Endo; Yoshio Kawamura; Masahiko Yamamoto; Takashi Takenaga; Sunao Aya; Takeharu Kuroiwa; Sadeh Beysen; Hiroshi Kobayashi

doi:10.1016/j.jmmm.2004.09.031

Magnetically pinned ring dots for spin valve or magnetic tunnel junction memory cells

Ryoichi Nakatani, Tetsuo Yoshida, Yasushi Endo, Yoshio Kawamura, Masahiko Yamamoto, Takashi Takenaga, Sunao Aya, Takeharu Kuroiwa, Sadeh Beysen, Hiroshi Kobayashi

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Ni-Fe/Mn-Ir asymmetric ring dots with partially planed outer sides are investigated in order to confirm a method for obtaining pinned layers in magnetic memories with asymmetric ring shapes. Magnetic force microscopy revealed that the direction of vortical magnetization is pinned in Ni-Fe/Mn-Ir asymmetric ring dots despite the direction of the magnetic fields. This investigation shows that the Ni-Fe/Mn-Ir asymmetric ring dots can be applied to pinned layers in magnetic memories with asymmetric ring shapes.

Original language	English
Pages (from-to)	31-36
Number of pages	6
Journal	Journal of Magnetism and Magnetic Materials
Volume	286
Issue number	SPEC. ISS.
DOIs	https://doi.org/10.1016/j.jmmm.2004.09.031
Publication status	Published - 2005 Feb
Externally published	Yes

Keywords

Antiferromagnetic layer
Magnetic force microscopy
Magnetic memory
Magnetization reversal

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1016/j.jmmm.2004.09.031

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Magnetically pinned ring dots for spin valve or magnetic tunnel junction memory cells. / Nakatani, Ryoichi; Yoshida, Tetsuo; Endo, Yasushi; Kawamura, Yoshio; Yamamoto, Masahiko; Takenaga, Takashi; Aya, Sunao; Kuroiwa, Takeharu; Beysen, Sadeh; Kobayashi, Hiroshi.

In: Journal of Magnetism and Magnetic Materials, Vol. 286, No. SPEC. ISS., 02.2005, p. 31-36.

Research output: Contribution to journal › Article › peer-review

@article{1366b6756bc141fab761f1ffa87373c9,

title = "Magnetically pinned ring dots for spin valve or magnetic tunnel junction memory cells",

abstract = "Ni-Fe/Mn-Ir asymmetric ring dots with partially planed outer sides are investigated in order to confirm a method for obtaining pinned layers in magnetic memories with asymmetric ring shapes. Magnetic force microscopy revealed that the direction of vortical magnetization is pinned in Ni-Fe/Mn-Ir asymmetric ring dots despite the direction of the magnetic fields. This investigation shows that the Ni-Fe/Mn-Ir asymmetric ring dots can be applied to pinned layers in magnetic memories with asymmetric ring shapes.",

keywords = "Antiferromagnetic layer, Magnetic force microscopy, Magnetic memory, Magnetization reversal",

author = "Ryoichi Nakatani and Tetsuo Yoshida and Yasushi Endo and Yoshio Kawamura and Masahiko Yamamoto and Takashi Takenaga and Sunao Aya and Takeharu Kuroiwa and Sadeh Beysen and Hiroshi Kobayashi",

year = "2005",

month = feb,

doi = "10.1016/j.jmmm.2004.09.031",

language = "English",

volume = "286",

pages = "31--36",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

number = "SPEC. ISS.",

}

TY - JOUR

T1 - Magnetically pinned ring dots for spin valve or magnetic tunnel junction memory cells

AU - Nakatani, Ryoichi

AU - Yoshida, Tetsuo

AU - Endo, Yasushi

AU - Kawamura, Yoshio

AU - Yamamoto, Masahiko

AU - Takenaga, Takashi

AU - Aya, Sunao

AU - Kuroiwa, Takeharu

AU - Beysen, Sadeh

AU - Kobayashi, Hiroshi

PY - 2005/2

Y1 - 2005/2

N2 - Ni-Fe/Mn-Ir asymmetric ring dots with partially planed outer sides are investigated in order to confirm a method for obtaining pinned layers in magnetic memories with asymmetric ring shapes. Magnetic force microscopy revealed that the direction of vortical magnetization is pinned in Ni-Fe/Mn-Ir asymmetric ring dots despite the direction of the magnetic fields. This investigation shows that the Ni-Fe/Mn-Ir asymmetric ring dots can be applied to pinned layers in magnetic memories with asymmetric ring shapes.

AB - Ni-Fe/Mn-Ir asymmetric ring dots with partially planed outer sides are investigated in order to confirm a method for obtaining pinned layers in magnetic memories with asymmetric ring shapes. Magnetic force microscopy revealed that the direction of vortical magnetization is pinned in Ni-Fe/Mn-Ir asymmetric ring dots despite the direction of the magnetic fields. This investigation shows that the Ni-Fe/Mn-Ir asymmetric ring dots can be applied to pinned layers in magnetic memories with asymmetric ring shapes.

KW - Antiferromagnetic layer

KW - Magnetic force microscopy

KW - Magnetic memory

KW - Magnetization reversal

UR - http://www.scopus.com/inward/record.url?scp=19944428907&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=19944428907&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2004.09.031

DO - 10.1016/j.jmmm.2004.09.031

M3 - Article

AN - SCOPUS:19944428907

VL - 286

SP - 31

EP - 36

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

IS - SPEC. ISS.

ER -