Magnetic tunnel junctions with perpendicular anisotropy using a Co 2FeAl full-Heusler alloy

Zhenchao Wen, Hiroaki Sukegawa, Shinya Kasai, Masamitsu Hayashi, Seiji Mitani, Koichiro Inomata

Research output: Contribution to journalArticlepeer-review

48 Citations (Scopus)


We fabricated perpendicularly magnetized magnetic tunnel junctions (p-MTJs) with an ultrathin Co 2FeAl (CFA) full-Heusler alloy electrode having large interface magnetic anisotropy of CFA/MgO. An out-of-plane tunnel magnetoresistance (TMR) ratio of 53% at room temperature was observed in CFA/MgO/Co 20Fe 60B 20 p-MTJs. By inserting a 0.1-nm-thick Fe (Co 50Fe 50) layer between the MgO and Co 20Fe 60B 20 layers, The TMR ratio was significantly enhanced to 91% (82%) due to the improved interface. The bias voltage dependence of differential conductance did not clearly show coherent tunneling characteristics for ultrathin CFA-MTJs, suggesting that a higher TMR ratio may be achieved by improving the B2 ordering of CFA and/or interface structure.

Original languageEnglish
Article number063003
JournalApplied Physics Express
Issue number6
Publication statusPublished - 2012 Jun

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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