Magnetic tunnel junctions with high magnetoresistance and small bias voltage dependence using epitaxial NiFe(111) ferromagnetic bottom electrodes

Ji Hyung Yu, Hyuck Mo Lee, Masamitsu Hayashi, Mikihiko Oogane, Tadaomi Daibou, Hiroaki Nakamura, Hitoshi Kubota, Yasuo Ando, Terunobu Miyazaki

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Magnetic tunnel junctions (MTJ) were fabricated using Al-O insulating layers prepared on epitaxial Ni80Fe20 (NiFe) bottom electrode. Fewer defects were expected in an insulator grown on the epitaxial bottom electrode than one on the textured bottom electrode. The result indicated that output signals of the devices based on MTJ could be enhanced by improving insulating layer quality.

Original languageEnglish
Pages (from-to)8555-8557
Number of pages3
JournalJournal of Applied Physics
Volume93
Issue number10 3
DOIs
Publication statusPublished - 2003 May 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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