Magnetic Tunnel Junctions with [Co/Pd]-Based Reference Layer and CoFeB Sensing Layer for Magnetic Sensor

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10 Citations (Scopus)

Abstract

We investigated the tunneling magnetoresistance (TMR) properties for the magnetic sensor application in MgO-based magnetic tunnel junctions (MTJs) using a perpendicularly magnetized [Co/Pd]-based reference layer and an in-plane magnetized CoFeB sensing layer with various thicknesses (tCoFeB). Linear TMR curves to an out-of-plane magnetic field were successfully obtained with a dynamic range of more than 600 Oe, corresponding to the coercivity of the [Co/Pd]-based reference layer. The MTJs showed the highest sensitivity of 0.026%/Oe for tCoFeB = 1.8 nm and the smallest nonlinearity of 0.11% full scale for tCoFeB = 3 nm. We clarified that the sensitivity and the nonlinearity in the MTJs are significantly associated with tCoFeB, which is attributed to the change in the anisotropy field of the CoFeB sensing layer.

Original languageEnglish
Article number7383282
JournalIEEE Transactions on Magnetics
Volume52
Issue number7
DOIs
Publication statusPublished - 2016 Jul

Keywords

  • Magnetic sensors
  • magnetic tunnel junctions (MTJs)
  • perpendicular magnetic anisotropy (PMA)
  • tunneling magnetoresistance (TMR)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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