Magnetic tunnel junctions using epitaxially grown FeAlSi electrode with soft magnetic property

Shoma Akamatsu; Mikihiko Oogane; Masakiyo Tsunoda; Yasuo Ando

doi:10.1063/5.0094619

Magnetic tunnel junctions using epitaxially grown FeAlSi electrode with soft magnetic property

Shoma Akamatsu, Mikihiko Oogane, Masakiyo Tsunoda, Yasuo Ando

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Magnetic tunnel junctions (MTJs) with (001)-oriented D03-FeAlSi epitaxial films, which have both soft magnetic properties and surface flatness, were fabricated and characterized. A tunnel magnetoresistance (TMR) ratio of 121% was observed, and a relatively low switching field was also confirmed, reflecting the soft magnetic property of FeAlSi. However, the results of the cross-sectional TEM image of the MTJ and the bias dependence of the TMR ratio indicate that the FeAlSi/MgO interface is probably oxidized. Therefore, since an insertion layer at the interface can suppress oxidation and further improve the TMR ratio, MTJs using FeAlSi epitaxial films are promising structures suitable for applications such as MTJ-based magnetic sensors and worthy of further investigation.

Original language	English
Article number	075021
Journal	AIP Advances
Volume	12
Issue number	7
DOIs	https://doi.org/10.1063/5.0094619
Publication status	Published - 2022 Jul 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/5.0094619

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title = "Magnetic tunnel junctions using epitaxially grown FeAlSi electrode with soft magnetic property",

abstract = "Magnetic tunnel junctions (MTJs) with (001)-oriented D03-FeAlSi epitaxial films, which have both soft magnetic properties and surface flatness, were fabricated and characterized. A tunnel magnetoresistance (TMR) ratio of 121% was observed, and a relatively low switching field was also confirmed, reflecting the soft magnetic property of FeAlSi. However, the results of the cross-sectional TEM image of the MTJ and the bias dependence of the TMR ratio indicate that the FeAlSi/MgO interface is probably oxidized. Therefore, since an insertion layer at the interface can suppress oxidation and further improve the TMR ratio, MTJs using FeAlSi epitaxial films are promising structures suitable for applications such as MTJ-based magnetic sensors and worthy of further investigation.",

author = "Shoma Akamatsu and Mikihiko Oogane and Masakiyo Tsunoda and Yasuo Ando",

note = "Funding Information: This work was supported by the Japan Society for the Promotion of Science (JSPS), the Japan Science and Technology Agency (JST) S-Innovation Program, the Center for Science and Innovation in Spintronics (CSIS, Tohoku University), the Center for Spintron-ics Research Network (CSRN, Tohoku University), the Instrumental Analysis Group (Technical Division, School of Engineering, Tohoku University), GP-Spin at Tohoku University, the ANRI Fellowship, and Tohoku University. Publisher Copyright: {\textcopyright} 2022 Author(s).",

year = "2022",

month = jul,

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doi = "10.1063/5.0094619",

language = "English",

volume = "12",

journal = "AIP Advances",

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T1 - Magnetic tunnel junctions using epitaxially grown FeAlSi electrode with soft magnetic property

AU - Akamatsu, Shoma

AU - Oogane, Mikihiko

AU - Tsunoda, Masakiyo

AU - Ando, Yasuo

N1 - Funding Information: This work was supported by the Japan Society for the Promotion of Science (JSPS), the Japan Science and Technology Agency (JST) S-Innovation Program, the Center for Science and Innovation in Spintronics (CSIS, Tohoku University), the Center for Spintron-ics Research Network (CSRN, Tohoku University), the Instrumental Analysis Group (Technical Division, School of Engineering, Tohoku University), GP-Spin at Tohoku University, the ANRI Fellowship, and Tohoku University. Publisher Copyright: © 2022 Author(s).

PY - 2022/7/1

Y1 - 2022/7/1

N2 - Magnetic tunnel junctions (MTJs) with (001)-oriented D03-FeAlSi epitaxial films, which have both soft magnetic properties and surface flatness, were fabricated and characterized. A tunnel magnetoresistance (TMR) ratio of 121% was observed, and a relatively low switching field was also confirmed, reflecting the soft magnetic property of FeAlSi. However, the results of the cross-sectional TEM image of the MTJ and the bias dependence of the TMR ratio indicate that the FeAlSi/MgO interface is probably oxidized. Therefore, since an insertion layer at the interface can suppress oxidation and further improve the TMR ratio, MTJs using FeAlSi epitaxial films are promising structures suitable for applications such as MTJ-based magnetic sensors and worthy of further investigation.

AB - Magnetic tunnel junctions (MTJs) with (001)-oriented D03-FeAlSi epitaxial films, which have both soft magnetic properties and surface flatness, were fabricated and characterized. A tunnel magnetoresistance (TMR) ratio of 121% was observed, and a relatively low switching field was also confirmed, reflecting the soft magnetic property of FeAlSi. However, the results of the cross-sectional TEM image of the MTJ and the bias dependence of the TMR ratio indicate that the FeAlSi/MgO interface is probably oxidized. Therefore, since an insertion layer at the interface can suppress oxidation and further improve the TMR ratio, MTJs using FeAlSi epitaxial films are promising structures suitable for applications such as MTJ-based magnetic sensors and worthy of further investigation.

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Magnetic tunnel junctions using epitaxially grown FeAlSi electrode with soft magnetic property

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