Magnetic tunnel junctions using B2-ordered Co2 MnAl Heusler alloy epitaxial electrode

Y. Sakuraba, J. Nakata, M. Oogane, Y. Ando, H. Kato, A. Sakuma, T. Miyazaki, H. Kubota

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Abstract

Magnetic tunnel junctions were fabricated with epitaxially grown Co2 MnAl bottom electrodes combined with an Al-O tunnel barrier using a magnetron sputtering system. The epitaxial Co2 MnAl electrode had very low surface roughness of 0.2 nm and a highly ordered B2 structure. Magnetic tunnel junctions (MTJs) with a stacking structure of epitaxial- Co2 MnAlAl-OCoFeIrMn exhibited large tunnel magnetoresistance (TMR) ratios of 65% at room temperature and 83% at 10 K. The TMR ratios were larger than those of a MTJ with a Co2 MnAl polycrystalline electrode.

Original languageEnglish
Article number022503
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume88
Issue number2
DOIs
Publication statusPublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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