Magnetic tunnel junctions were fabricated with epitaxially grown Co2 MnAl bottom electrodes combined with an Al-O tunnel barrier using a magnetron sputtering system. The epitaxial Co2 MnAl electrode had very low surface roughness of 0.2 nm and a highly ordered B2 structure. Magnetic tunnel junctions (MTJs) with a stacking structure of epitaxial- Co2 MnAlAl-OCoFeIrMn exhibited large tunnel magnetoresistance (TMR) ratios of 65% at room temperature and 83% at 10 K. The TMR ratios were larger than those of a MTJ with a Co2 MnAl polycrystalline electrode.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)