Linear magnetoresistance is an important attribute for magnetic sensor design in space applications, three-dimensional detection of the magnetic field, and high field measurements. Here we demonstrate that a large linear magnetoresistance of up to 22% can be achieved in a magnetic tunnel junction that consists of two ferromagnetic layers, one with out of plane and one with in-plane magnetic anisotropy. The tunneling magnetoresistance with the electrical current perpendicular to the film plane and the magnetic configuration of the device are analyzed.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)