Magnetic tunnel junction sensor with Co/Pt perpendicular anisotropy ferromagnetic layer

H. X. Wei, Q. H. Qin, Z. C. Wen, X. F. Han, X. G. Zhang

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)

Abstract

Linear magnetoresistance is an important attribute for magnetic sensor design in space applications, three-dimensional detection of the magnetic field, and high field measurements. Here we demonstrate that a large linear magnetoresistance of up to 22% can be achieved in a magnetic tunnel junction that consists of two ferromagnetic layers, one with out of plane and one with in-plane magnetic anisotropy. The tunneling magnetoresistance with the electrical current perpendicular to the film plane and the magnetic configuration of the device are analyzed.

Original languageEnglish
Article number172902
JournalApplied Physics Letters
Volume94
Issue number17
DOIs
Publication statusPublished - 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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