Magnetic switching properties of magnetic tunnel junctions using a synthetic ferrimagnet free layer

T. Nozaki, Y. Jiang, H. Sukegawa, N. Tezuka, A. Hirohata, K. Inomata, S. Sugimoto

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The magnetic switching properties of magnetic tunnel junctions (MTJ) using a synthetic ferrimagnet (SyF) free layer were studied. The free layers were deposited on a thermally oxidized Si substrate by an ultrahigh vacuum sputtering system. The tunneling magnetoresistance (TMR) curves were measured using a dc four probe method. It was observed that the SyF free layer showed a size independent switching field for all element widths from 0.25 to 16 μm. Large TMR ratio up to 40% was exhibited by the MTJs after annealing at 250 °C.

Original languageEnglish
Pages (from-to)3745-3748
Number of pages4
JournalJournal of Applied Physics
Volume95
Issue number7
DOIs
Publication statusPublished - 2004 Apr 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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