Magnetic properties of Mn-doped GaN, InGaN, and AlGaN

M. L. Reed; E. A. Berkman; M. J. Reed; P. E. Arkun; T. Chikyow; S. M. Bedair; J. M. Zavada; N. A. El-Masry

doi:10.1557/proc-798-y8.6

Magnetic properties of Mn-doped GaN, InGaN, and AlGaN

M. L. Reed, E. A. Berkman, M. J. Reed, P. E. Arkun, T. Chikyow, S. M. Bedair, J. M. Zavada, N. A. El-Masry

Advanced Institute for Materials Research (AIMR)

Research output: Contribution to journal › Conference article

3 Citations (Scopus)

Abstract

We report on the growth and magnetic properties of single crystal Mn-doped GaN, InGaN, and AlGaN films. The III-Nitride films were grown by MOCVD, while the Mn doping was performed by solid-state diffusion of a surface Mn layer deposited by pulsed laser ablation. Mn-doped In_xGa_1-xN films were grown with x < 0.15, where the easy axis of magnetization rotates from in-plane to out-of-plane by changing the In_xGa_1-xN thickness/strain-state of the film from compressively strained to relaxed. Mn-doped Al_xGa_1-xN films were grown with x < 0.40 showing ferromagnetic behavior above room temperature. SQUID measurements ruled out superparamagnetism within these films. By optimizing the growth and annealing conditions of Mn-doped III-Nitrides, we have achieved Curie temperatures in the range of 228 to 500K. These ferromagnetic Mn-doped III-Nitride films exhibit hysteresis with a coercivity of 100-500 Oe. TEM analysis showed no secondary phases within these films.

Original language	English
Pages (from-to)	563-568
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	798
DOIs	https://doi.org/10.1557/proc-798-y8.6
Publication status	Published - 2003
Event	GaN and Related Alloys - 2003 - Boston, MA, United States Duration: 2003 Dec 1 → 2003 Dec 5

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Reed, M. L., Berkman, E. A., Reed, M. J., Arkun, P. E., Chikyow, T., Bedair, S. M., Zavada, J. M., & El-Masry, N. A. (2003). Magnetic properties of Mn-doped GaN, InGaN, and AlGaN. Materials Research Society Symposium - Proceedings, 798, 563-568. https://doi.org/10.1557/proc-798-y8.6

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title = "Magnetic properties of Mn-doped GaN, InGaN, and AlGaN",

abstract = "We report on the growth and magnetic properties of single crystal Mn-doped GaN, InGaN, and AlGaN films. The III-Nitride films were grown by MOCVD, while the Mn doping was performed by solid-state diffusion of a surface Mn layer deposited by pulsed laser ablation. Mn-doped InxGa1-xN films were grown with x < 0.15, where the easy axis of magnetization rotates from in-plane to out-of-plane by changing the InxGa1-xN thickness/strain-state of the film from compressively strained to relaxed. Mn-doped AlxGa1-xN films were grown with x < 0.40 showing ferromagnetic behavior above room temperature. SQUID measurements ruled out superparamagnetism within these films. By optimizing the growth and annealing conditions of Mn-doped III-Nitrides, we have achieved Curie temperatures in the range of 228 to 500K. These ferromagnetic Mn-doped III-Nitride films exhibit hysteresis with a coercivity of 100-500 Oe. TEM analysis showed no secondary phases within these films.",

author = "Reed, {M. L.} and Berkman, {E. A.} and Reed, {M. J.} and Arkun, {P. E.} and T. Chikyow and Bedair, {S. M.} and Zavada, {J. M.} and El-Masry, {N. A.}",

year = "2003",

doi = "10.1557/proc-798-y8.6",

language = "English",

volume = "798",

pages = "563--568",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "GaN and Related Alloys - 2003 ; Conference date: 01-12-2003 Through 05-12-2003",

}

TY - JOUR

T1 - Magnetic properties of Mn-doped GaN, InGaN, and AlGaN

AU - Reed, M. L.

AU - Berkman, E. A.

AU - Reed, M. J.

AU - Arkun, P. E.

AU - Chikyow, T.

AU - Bedair, S. M.

AU - Zavada, J. M.

AU - El-Masry, N. A.

PY - 2003

Y1 - 2003

N2 - We report on the growth and magnetic properties of single crystal Mn-doped GaN, InGaN, and AlGaN films. The III-Nitride films were grown by MOCVD, while the Mn doping was performed by solid-state diffusion of a surface Mn layer deposited by pulsed laser ablation. Mn-doped InxGa1-xN films were grown with x < 0.15, where the easy axis of magnetization rotates from in-plane to out-of-plane by changing the InxGa1-xN thickness/strain-state of the film from compressively strained to relaxed. Mn-doped AlxGa1-xN films were grown with x < 0.40 showing ferromagnetic behavior above room temperature. SQUID measurements ruled out superparamagnetism within these films. By optimizing the growth and annealing conditions of Mn-doped III-Nitrides, we have achieved Curie temperatures in the range of 228 to 500K. These ferromagnetic Mn-doped III-Nitride films exhibit hysteresis with a coercivity of 100-500 Oe. TEM analysis showed no secondary phases within these films.

AB - We report on the growth and magnetic properties of single crystal Mn-doped GaN, InGaN, and AlGaN films. The III-Nitride films were grown by MOCVD, while the Mn doping was performed by solid-state diffusion of a surface Mn layer deposited by pulsed laser ablation. Mn-doped InxGa1-xN films were grown with x < 0.15, where the easy axis of magnetization rotates from in-plane to out-of-plane by changing the InxGa1-xN thickness/strain-state of the film from compressively strained to relaxed. Mn-doped AlxGa1-xN films were grown with x < 0.40 showing ferromagnetic behavior above room temperature. SQUID measurements ruled out superparamagnetism within these films. By optimizing the growth and annealing conditions of Mn-doped III-Nitrides, we have achieved Curie temperatures in the range of 228 to 500K. These ferromagnetic Mn-doped III-Nitride films exhibit hysteresis with a coercivity of 100-500 Oe. TEM analysis showed no secondary phases within these films.

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DO - 10.1557/proc-798-y8.6

M3 - Conference article

AN - SCOPUS:2942672566

VL - 798

SP - 563

EP - 568

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

T2 - GaN and Related Alloys - 2003

Y2 - 1 December 2003 through 5 December 2003

ER -