Magnetic properties of Mn-doped GaN, InGaN, and AlGaN

M. L. Reed, E. A. Berkman, M. J. Reed, P. E. Arkun, T. Chikyow, S. M. Bedair, J. M. Zavada, N. A. El-Masry

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)


We report on the growth and magnetic properties of single crystal Mn-doped GaN, InGaN, and AlGaN films. The III-Nitride films were grown by MOCVD, while the Mn doping was performed by solid-state diffusion of a surface Mn layer deposited by pulsed laser ablation. Mn-doped InxGa1-xN films were grown with x < 0.15, where the easy axis of magnetization rotates from in-plane to out-of-plane by changing the InxGa1-xN thickness/strain-state of the film from compressively strained to relaxed. Mn-doped AlxGa1-xN films were grown with x < 0.40 showing ferromagnetic behavior above room temperature. SQUID measurements ruled out superparamagnetism within these films. By optimizing the growth and annealing conditions of Mn-doped III-Nitrides, we have achieved Curie temperatures in the range of 228 to 500K. These ferromagnetic Mn-doped III-Nitride films exhibit hysteresis with a coercivity of 100-500 Oe. TEM analysis showed no secondary phases within these films.

Original languageEnglish
Pages (from-to)563-568
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 2003
EventGaN and Related Alloys - 2003 - Boston, MA, United States
Duration: 2003 Dec 12003 Dec 5

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Magnetic properties of Mn-doped GaN, InGaN, and AlGaN'. Together they form a unique fingerprint.

Cite this