Abstract
We report on the growth and magnetic properties of single crystal Mn-doped GaN, InGaN, and AlGaN films. The III-Nitride films were grown by MOCVD, while the Mn doping was performed by solid-state diffusion of a surface Mn layer deposited by pulsed laser ablation. Mn-doped InxGa1-xN films were grown with x < 0.15, where the easy axis of magnetization rotates from in-plane to out-of-plane by changing the InxGa1-xN thickness/strain-state of the film from compressively strained to relaxed. Mn-doped AlxGa1-xN films were grown with x < 0.40 showing ferromagnetic behavior above room temperature. SQUID measurements ruled out superparamagnetism within these films. By optimizing the growth and annealing conditions of Mn-doped III-Nitrides, we have achieved Curie temperatures in the range of 228 to 500K. These ferromagnetic Mn-doped III-Nitride films exhibit hysteresis with a coercivity of 100-500 Oe. TEM analysis showed no secondary phases within these films.
Original language | English |
---|---|
Pages (from-to) | 563-568 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 798 |
DOIs | |
Publication status | Published - 2003 |
Event | GaN and Related Alloys - 2003 - Boston, MA, United States Duration: 2003 Dec 1 → 2003 Dec 5 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering