An examination was made of magnetic properties and the crystal structure of Fe-Si thin films prepared by a sputtering technique with air or oxygen added to the argon gas atmosphere. The coercive force of the film deposited in air plus argon gas decreased down to 1/5 value as compared with the film deposited in pure argon gas. In this case the crystal orientation changed and the grain size became smaller. The coercive force of the films deposited in oxygen added argon gas atmosphere also decreased down to the same value as that of the air addition case. Accordingly the initial permeability increased. It is thought that these changes of the magnetic properties were caused by oxidation of silicon in the films.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering