Fe-Si (0-16 wt% Si) and Fe-Si-Al (3-14 wt% Si, 0-8 wt% Al, bal Fe) alloy films were prepared by the DC sputtering technique. In Fe-Si films, the equilibrium phase expected from the phase diagram was obtained under sputtering conditions of P//A//r equals 40 mTorr and V//D//C equals 3. 5 kV, while the disordered alpha -phase was realized as a nonequilibrium phase up to about 16 wt% Si under the sputtering conditions P//A//r equals 40 mTorr and V//D//C equals 2. 0 kV. The concentration dependence of the magnetostriction lambda for Fe-Si films sputtered at V//D//C equals 3. 5 kV was found to be nearly the same as that of bulk crystals. However, for Fe-Si films consisting of the alpha -phase, the sign of lambda remains positive up to about 16 wt% Si. Concentration corresponding to zero magnetostriction ( lambda equals 0), determined for Fe-Si-Al films was found to be different from that of bulk crystals, and also different from that reported for evaporated films. The experimental data indicate that films with soft magnetic properties, such as those of Sendust alloy, can best be realized in the Fe-rich concentration portion.
|Number of pages||7|
|Journal||IEEE translation journal on magnetics in Japan|
|Publication status||Published - 1985 Oct|
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