Magnetic Properties of Fe-M-O (M=Zr, Hf) Films with High Resistivity

Y. Hayakawa; K. Hirokawa; A. Makino

doi:10.1109/TJMJ.1994.4565994

Magnetic Properties of Fe-M-O (M=Zr, Hf) Films with High Resistivity

Y. Hayakawa, K. Hirokawa, A. Makino

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Abstract

The magnetic properties of Fe-M-O (M=Zr, Hf) films with high electrical resistivity, prepared by the rf magnetron sputtering technique in an Ar+O2 atmosphere, were investigated. In the as-deposited state, low coercivities (Hc) in the range 30 to 100 A/m were obtained for Fe-Hf-O, and 160 to 240 A/m for Fe-Zr-O, in the composition range characterized by an O/M ratio of between 3 and 4. After annealing under optimum conditions in an external field of 160 kA/m, the results obtained for Fe54.9Hf11O34.1 and Fe65.3Zr8.9O25.8 included a saturation magnetization (Bs) of 1.2 T, an Hc of 64 A/m, and a μ at 100 MHz of 1600 for the former, and a Bs of 1.3 T, Hc of 73 A/m and μ at 100 MHz of 1000 for the latter. Further, the electrical resistivities of the films were much higher than those of known metallic soft magnetic films.

Original language	English
Pages (from-to)	286-290
Number of pages	5
Journal	IEEE Translation Journal on Magnetics in Japan
Volume	9
Issue number	6
DOIs	https://doi.org/10.1109/TJMJ.1994.4565994
Publication status	Published - 1994 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Engineering (miscellaneous)

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Hayakawa, Y., Hirokawa, K., & Makino, A. (1994). Magnetic Properties of Fe-M-O (M=Zr, Hf) Films with High Resistivity. IEEE Translation Journal on Magnetics in Japan, 9(6), 286-290. https://doi.org/10.1109/TJMJ.1994.4565994

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title = "Magnetic Properties of Fe-M-O (M=Zr, Hf) Films with High Resistivity",

abstract = "The magnetic properties of Fe-M-O (M=Zr, Hf) films with high electrical resistivity, prepared by the rf magnetron sputtering technique in an Ar+O2 atmosphere, were investigated. In the as-deposited state, low coercivities (Hc) in the range 30 to 100 A/m were obtained for Fe-Hf-O, and 160 to 240 A/m for Fe-Zr-O, in the composition range characterized by an O/M ratio of between 3 and 4. After annealing under optimum conditions in an external field of 160 kA/m, the results obtained for Fe54.9Hf11O34.1 and Fe65.3Zr8.9O25.8 included a saturation magnetization (Bs) of 1.2 T, an Hc of 64 A/m, and a μ at 100 MHz of 1600 for the former, and a Bs of 1.3 T, Hc of 73 A/m and μ at 100 MHz of 1000 for the latter. Further, the electrical resistivities of the films were much higher than those of known metallic soft magnetic films.",

author = "Y. Hayakawa and K. Hirokawa and A. Makino",

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AU - Hirokawa, K.

AU - Makino, A.

PY - 1994/1/1

Y1 - 1994/1/1

N2 - The magnetic properties of Fe-M-O (M=Zr, Hf) films with high electrical resistivity, prepared by the rf magnetron sputtering technique in an Ar+O2 atmosphere, were investigated. In the as-deposited state, low coercivities (Hc) in the range 30 to 100 A/m were obtained for Fe-Hf-O, and 160 to 240 A/m for Fe-Zr-O, in the composition range characterized by an O/M ratio of between 3 and 4. After annealing under optimum conditions in an external field of 160 kA/m, the results obtained for Fe54.9Hf11O34.1 and Fe65.3Zr8.9O25.8 included a saturation magnetization (Bs) of 1.2 T, an Hc of 64 A/m, and a μ at 100 MHz of 1600 for the former, and a Bs of 1.3 T, Hc of 73 A/m and μ at 100 MHz of 1000 for the latter. Further, the electrical resistivities of the films were much higher than those of known metallic soft magnetic films.

AB - The magnetic properties of Fe-M-O (M=Zr, Hf) films with high electrical resistivity, prepared by the rf magnetron sputtering technique in an Ar+O2 atmosphere, were investigated. In the as-deposited state, low coercivities (Hc) in the range 30 to 100 A/m were obtained for Fe-Hf-O, and 160 to 240 A/m for Fe-Zr-O, in the composition range characterized by an O/M ratio of between 3 and 4. After annealing under optimum conditions in an external field of 160 kA/m, the results obtained for Fe54.9Hf11O34.1 and Fe65.3Zr8.9O25.8 included a saturation magnetization (Bs) of 1.2 T, an Hc of 64 A/m, and a μ at 100 MHz of 1600 for the former, and a Bs of 1.3 T, Hc of 73 A/m and μ at 100 MHz of 1000 for the latter. Further, the electrical resistivities of the films were much higher than those of known metallic soft magnetic films.

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