Magnetic properties of epitaxial Co 2Cr 1-xFe xAl full Heusler alloy thin films with the L2 1 structure

Astufumi Hirohata; Hidekazu Kurebayashi; Susumu Okamura; Nobuki Tezuka; Koichiro Inomata

doi:10.1109/TMAG.2005.854831

Magnetic properties of epitaxial Co ₂Cr _1-xFe _xAl full Heusler alloy thin films with the L2 ₁ structure

Astufumi Hirohata, Hidekazu Kurebayashi, Susumu Okamura, Nobuki Tezuka, Koichiro Inomata

ENG - Materials Science

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Co ₂Cr _1-xFe _xAl full Heusler alloy thin films (x ≥ 0.4) have been epitaxially grown on GaAs(001) substrates under the optimized condition. Structural analysis reveals the detailed growth mechanism of the films and confirms that the films form the perfectly ordered L2 ₁ structure. A magnetization measurement also shows the films possess very strong uniaxial crystalline anisotropy due to the epitaxial growth. By using these films as bottom electrodes of magnetic tunnel junctions, the maximum tunnel magnetoresistance ratio of 8.8% is observed after post-annealing with Al-O insulating barriers for x = 1.

Original language	English
Pages (from-to)	2802-2804
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	41
Issue number	10
DOIs	https://doi.org/10.1109/TMAG.2005.854831
Publication status	Published - 2005 Oct

Keywords

Epitaxial growth
Full Heusler alloys
Half-metallic ferromagnets
Tunnel magnetoresistance

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Magnetic properties of epitaxial Co 2Cr 1-xFe xAl full Heusler alloy thin films with the L2 1 structure",

abstract = "Co 2Cr 1-xFe xAl full Heusler alloy thin films (x ≥ 0.4) have been epitaxially grown on GaAs(001) substrates under the optimized condition. Structural analysis reveals the detailed growth mechanism of the films and confirms that the films form the perfectly ordered L2 1 structure. A magnetization measurement also shows the films possess very strong uniaxial crystalline anisotropy due to the epitaxial growth. By using these films as bottom electrodes of magnetic tunnel junctions, the maximum tunnel magnetoresistance ratio of 8.8% is observed after post-annealing with Al-O insulating barriers for x = 1.",

keywords = "Epitaxial growth, Full Heusler alloys, Half-metallic ferromagnets, Tunnel magnetoresistance",

author = "Astufumi Hirohata and Hidekazu Kurebayashi and Susumu Okamura and Nobuki Tezuka and Koichiro Inomata",

note = "Funding Information: The authors would like to thank M. Kikuchi for her help in the magnetization measurement. This work was supported by a Grant-in Aid for Scientific Research (A) 15206074 and IT-Program RR 2002 from MEXT.",

year = "2005",

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AU - Hirohata, Astufumi

AU - Kurebayashi, Hidekazu

AU - Okamura, Susumu

AU - Tezuka, Nobuki

AU - Inomata, Koichiro

N1 - Funding Information: The authors would like to thank M. Kikuchi for her help in the magnetization measurement. This work was supported by a Grant-in Aid for Scientific Research (A) 15206074 and IT-Program RR 2002 from MEXT.

PY - 2005/10

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AB - Co 2Cr 1-xFe xAl full Heusler alloy thin films (x ≥ 0.4) have been epitaxially grown on GaAs(001) substrates under the optimized condition. Structural analysis reveals the detailed growth mechanism of the films and confirms that the films form the perfectly ordered L2 1 structure. A magnetization measurement also shows the films possess very strong uniaxial crystalline anisotropy due to the epitaxial growth. By using these films as bottom electrodes of magnetic tunnel junctions, the maximum tunnel magnetoresistance ratio of 8.8% is observed after post-annealing with Al-O insulating barriers for x = 1.

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KW - Half-metallic ferromagnets

KW - Tunnel magnetoresistance

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