Magnetization behavior and Hall resistivity of YMn6Sn6, which crystallizes in the hexagonal HfFe6Ge6-type of structure, have been investigated on single crystals at various temperatures in the ordered magnetic state. The field dependence of the Hall resistivity shows anomalies, which are related to the field-induced spin reorientations occurring in YMn6Sn6. It is also found that the Hall resistivity cannot simply be described by the anomalous contribution proportional to the magnetization, but that an additional field-dependent contribution is present.
- Hall effect
- Magnetic phase transition
- Magnetically ordered materials
- Yttrium-manganese compounds
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics