Magnetic oxide semiconductors

T. Fukumura, H. Toyosaki, Y. Yamada

Research output: Contribution to journalReview articlepeer-review

195 Citations (Scopus)

Abstract

Magnetic oxide semiconductors, oxide semiconductors doped with transition metal elements, are one of the candidates for a high Curie temperature ferromagnetic semiconductor that is important to realize semiconductor spintronics at room temperature. We review in this paper recent progress of research on various magnetic oxide semiconductors. The magnetization, magneto-optical effect and magneto-transport such as the anomalous Hall effect are examined from the viewpoint of feasibility to evaluate the ferromagnetism. The ferromagnetism of Co-doped TiO2 and transition metal-doped ZnO is discussed.

Original languageEnglish
Pages (from-to)S103-S111
JournalSemiconductor Science and Technology
Volume20
Issue number4
DOIs
Publication statusPublished - 2005 Apr

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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