Magnetic-field-induced enhancement of THz-radiation power from femtosecond-laser-irradiated InAs up to 27 T

Hiroshi Takahashi; Yuji Suzuki; Alex Quema; Masahiro Sakai; Takayuki Yano; Shingo Ono; Nobuhiko Sarukura; Masato Hosomizu; Takeyo Tsukamoto; Gen Nishijima; Kazuo Watanabe

doi:10.1143/jjap.42.l532

Magnetic-field-induced enhancement of THz-radiation power from femtosecond-laser-irradiated InAs up to 27 T

Hiroshi Takahashi, Yuji Suzuki, Alex Quema, Masahiro Sakai, Takayuki Yano, Shingo Ono, Nobuhiko Sarukura, Masato Hosomizu, Takeyo Tsukamoto, Gen Nishijima, Kazuo Watanabe

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

The magnetic-field dependence of THz-radiation power from InAs surface is investigated by using a hybrid magnet, which is capable of providing a magnetic field up to 28 T. It is found that THz-radiation power saturates at approximately 3 T and also at 13 T. The maximum THz-radiation power with a high-frequency component spectrum is observed at 3 T. This result leads to the conclusion that a magnetic field of 3 T is optimum for the enhancement of THz-radiation power. Additionally, the THz-radiation spectrum exhibits a periodic structure at magnetic fields above 12 T. This can be attributed to the change in dielectric constant induced by the strong magnetic field resulting in the interference of THz-radiation pulses from the front and back surfaces of the InAs substrate.

Original language	English
Pages (from-to)	L532-L534
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	42
Issue number	5 B
DOIs	https://doi.org/10.1143/jjap.42.l532
Publication status	Published - 2003 May 15
Externally published	Yes

Keywords

Hybrid magnet
InAs
Semiconductor surface
Terahertz radiation
Tl:sapphire laser

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.42.l532

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title = "Magnetic-field-induced enhancement of THz-radiation power from femtosecond-laser-irradiated InAs up to 27 T",

abstract = "The magnetic-field dependence of THz-radiation power from InAs surface is investigated by using a hybrid magnet, which is capable of providing a magnetic field up to 28 T. It is found that THz-radiation power saturates at approximately 3 T and also at 13 T. The maximum THz-radiation power with a high-frequency component spectrum is observed at 3 T. This result leads to the conclusion that a magnetic field of 3 T is optimum for the enhancement of THz-radiation power. Additionally, the THz-radiation spectrum exhibits a periodic structure at magnetic fields above 12 T. This can be attributed to the change in dielectric constant induced by the strong magnetic field resulting in the interference of THz-radiation pulses from the front and back surfaces of the InAs substrate.",

keywords = "Hybrid magnet, InAs, Semiconductor surface, Terahertz radiation, Tl:sapphire laser",

author = "Hiroshi Takahashi and Yuji Suzuki and Alex Quema and Masahiro Sakai and Takayuki Yano and Shingo Ono and Nobuhiko Sarukura and Masato Hosomizu and Takeyo Tsukamoto and Gen Nishijima and Kazuo Watanabe",

year = "2003",

month = may,

day = "15",

doi = "10.1143/jjap.42.l532",

language = "English",

volume = "42",

pages = "L532--L534",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Magnetic-field-induced enhancement of THz-radiation power from femtosecond-laser-irradiated InAs up to 27 T

AU - Takahashi, Hiroshi

AU - Suzuki, Yuji

AU - Quema, Alex

AU - Sakai, Masahiro

AU - Yano, Takayuki

AU - Ono, Shingo

AU - Sarukura, Nobuhiko

AU - Hosomizu, Masato

AU - Tsukamoto, Takeyo

AU - Nishijima, Gen

AU - Watanabe, Kazuo

PY - 2003/5/15

Y1 - 2003/5/15

N2 - The magnetic-field dependence of THz-radiation power from InAs surface is investigated by using a hybrid magnet, which is capable of providing a magnetic field up to 28 T. It is found that THz-radiation power saturates at approximately 3 T and also at 13 T. The maximum THz-radiation power with a high-frequency component spectrum is observed at 3 T. This result leads to the conclusion that a magnetic field of 3 T is optimum for the enhancement of THz-radiation power. Additionally, the THz-radiation spectrum exhibits a periodic structure at magnetic fields above 12 T. This can be attributed to the change in dielectric constant induced by the strong magnetic field resulting in the interference of THz-radiation pulses from the front and back surfaces of the InAs substrate.

AB - The magnetic-field dependence of THz-radiation power from InAs surface is investigated by using a hybrid magnet, which is capable of providing a magnetic field up to 28 T. It is found that THz-radiation power saturates at approximately 3 T and also at 13 T. The maximum THz-radiation power with a high-frequency component spectrum is observed at 3 T. This result leads to the conclusion that a magnetic field of 3 T is optimum for the enhancement of THz-radiation power. Additionally, the THz-radiation spectrum exhibits a periodic structure at magnetic fields above 12 T. This can be attributed to the change in dielectric constant induced by the strong magnetic field resulting in the interference of THz-radiation pulses from the front and back surfaces of the InAs substrate.

KW - Hybrid magnet

KW - InAs

KW - Semiconductor surface

KW - Terahertz radiation

KW - Tl:sapphire laser

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DO - 10.1143/jjap.42.l532

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VL - 42

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 5 B

ER -

Magnetic-field-induced enhancement of THz-radiation power from femtosecond-laser-irradiated InAs up to 27 T

Abstract

Keywords

ASJC Scopus subject areas

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