Magnetic-field-induced enhancement of THz-radiation power from femtosecond-laser-irradiated InAs up to 27 T

Hiroshi Takahashi, Yuji Suzuki, Alex Quema, Masahiro Sakai, Takayuki Yano, Shingo Ono, Nobuhiko Sarukura, Masato Hosomizu, Takeyo Tsukamoto, Gen Nishijima, Kazuo Watanabe

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12 Citations (Scopus)

Abstract

The magnetic-field dependence of THz-radiation power from InAs surface is investigated by using a hybrid magnet, which is capable of providing a magnetic field up to 28 T. It is found that THz-radiation power saturates at approximately 3 T and also at 13 T. The maximum THz-radiation power with a high-frequency component spectrum is observed at 3 T. This result leads to the conclusion that a magnetic field of 3 T is optimum for the enhancement of THz-radiation power. Additionally, the THz-radiation spectrum exhibits a periodic structure at magnetic fields above 12 T. This can be attributed to the change in dielectric constant induced by the strong magnetic field resulting in the interference of THz-radiation pulses from the front and back surfaces of the InAs substrate.

Original languageEnglish
Pages (from-to)L532-L534
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume42
Issue number5 B
DOIs
Publication statusPublished - 2003 May 15

Keywords

  • Hybrid magnet
  • InAs
  • Semiconductor surface
  • Terahertz radiation
  • Tl:sapphire laser

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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