Abstract
The magnetic-field dependence of THz-radiation power from InAs surface is investigated by using a hybrid magnet, which is capable of providing a magnetic field up to 28 T. It is found that THz-radiation power saturates at approximately 3 T and also at 13 T. The maximum THz-radiation power with a high-frequency component spectrum is observed at 3 T. This result leads to the conclusion that a magnetic field of 3 T is optimum for the enhancement of THz-radiation power. Additionally, the THz-radiation spectrum exhibits a periodic structure at magnetic fields above 12 T. This can be attributed to the change in dielectric constant induced by the strong magnetic field resulting in the interference of THz-radiation pulses from the front and back surfaces of the InAs substrate.
Original language | English |
---|---|
Pages (from-to) | L532-L534 |
Journal | Japanese Journal of Applied Physics, Part 2: Letters |
Volume | 42 |
Issue number | 5 B |
DOIs | |
Publication status | Published - 2003 May 15 |
Externally published | Yes |
Keywords
- Hybrid magnet
- InAs
- Semiconductor surface
- Terahertz radiation
- Tl:sapphire laser
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)