Magnetic field dependence of threshold electric field for magnetoelectric switching of exchange-bias polarity

Thi Van Anh Nguyen, Yu Shiratsuchi, Atsushi Kobane, Saori Yoshida, Ryoichi Nakatani

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

We report the magnetic field dependence of the threshold electric field Eth for the magnetoelectric switching of the perpendicular exchange bias in Pt/Co/Au/Cr2O3/Pt stacked films using a reversible isothermal electric tuning approach. The Eth values for the positive-to-negative and negative-to-positive switching are different because of the unidirectional nature of the interfacial exchange coupling. The Eth values are inversely proportional to the magnetic-field strength, and the quantitative analysis of this relationship suggests that the switching is driven by the nucleation and growth of the antiferromagnetic domain. We also find that the magnetic-field dependence of Eth exhibits an offset electric field that might be related to the uncompensated antiferromagnetic moments located mainly at the interface.

Original languageEnglish
Article number073905
JournalJournal of Applied Physics
Volume122
Issue number7
DOIs
Publication statusPublished - 2017 Aug 21
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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