Magnetic-field-controllable avalanche breakdown and giant magnetoresistive effects in Gold/semi-insulating-GaAs Schottky diode

Z. G. Sun, M. Mizuguchi, T. Manago, H. Akinaga

Research output: Contribution to journalArticle

67 Citations (Scopus)

Abstract

Gold (Au)/semi-insulating (SI)-GaAs Schottky diode was fabricated by the standard photolithography method using wet etching. Magnetic-field-dependent avalanche breakdown phenomena were observed in the current-voltage curves measured under magnetic field. The avalanche breakdown due to impact ionization was postponed to higher electrical field under applied magnetic field. Accordingly, threshold voltages of avalanche breakdown increased with the applied magnetic field. Above 0.2 T, avalanche breakdown was totally quenched. When Au-SI-GaAs Schottky diode was operated above the threshold voltage, giant mangetoresistive effects up to 100 000% were achieved under magnetic field of 0.8 T.

Original languageEnglish
Pages (from-to)5643-5645
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number23
DOIs
Publication statusPublished - 2004 Dec 6
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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