Magnetic-field-angle dependence of coercivity in CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis

J. Igarashi; J. Llandro; H. Sato; F. Matsukura; H. Ohno

doi:10.1063/1.5004968

Magnetic-field-angle dependence of coercivity in CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis

J. Igarashi, J. Llandro, H. Sato, F. Matsukura, H. Ohno

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We investigate the magnetization-reversal mode in CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis from the magnetic-field-angle dependence of coercivity. The reversal in a free layer with diameter of ∼20 nm is found to be in a good agreement with coherent reversal mode for a device with a reference layer much larger than the free layer. However, the reversal mode is quite different in a junction in which the two layers are almost the same size. From micromagnetic simulation, the difference is attributed to the reduction of the magnetic anisotropy in the vicinity of the device edge.

Original language	English
Article number	132407
Journal	Applied Physics Letters
Volume	111
Issue number	13
DOIs	https://doi.org/10.1063/1.5004968
Publication status	Published - 2017 Sep 25

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Magnetic-field-angle dependence of coercivity in CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis",

abstract = "We investigate the magnetization-reversal mode in CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis from the magnetic-field-angle dependence of coercivity. The reversal in a free layer with diameter of ∼20 nm is found to be in a good agreement with coherent reversal mode for a device with a reference layer much larger than the free layer. However, the reversal mode is quite different in a junction in which the two layers are almost the same size. From micromagnetic simulation, the difference is attributed to the reduction of the magnetic anisotropy in the vicinity of the device edge.",

author = "J. Igarashi and J. Llandro and H. Sato and F. Matsukura and H. Ohno",

note = "Funding Information: The work was supported in part by R&D for Next-Generation Information Technology of MEXT, ImPACT Program of CSTI, the Cooperative Research Project of RIEC, Tohoku University, and JSPS KAKENHI Grant No. 16K18084. The authors wish to thank E. C. I. Enobio, K. Watanabe, S. Fukami, T. Hirata, H. Iwanuma, Y. Kawato, K. Goto, and C. Igarashi for technical support and discussion. J.I. and J.L. acknowledge support from GP-Spin at Tohoku University. Publisher Copyright: {\textcopyright} 2017 Author(s).",

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doi = "10.1063/1.5004968",

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AU - Igarashi, J.

AU - Llandro, J.

AU - Sato, H.

AU - Matsukura, F.

AU - Ohno, H.

N1 - Funding Information: The work was supported in part by R&D for Next-Generation Information Technology of MEXT, ImPACT Program of CSTI, the Cooperative Research Project of RIEC, Tohoku University, and JSPS KAKENHI Grant No. 16K18084. The authors wish to thank E. C. I. Enobio, K. Watanabe, S. Fukami, T. Hirata, H. Iwanuma, Y. Kawato, K. Goto, and C. Igarashi for technical support and discussion. J.I. and J.L. acknowledge support from GP-Spin at Tohoku University. Publisher Copyright: © 2017 Author(s).

PY - 2017/9/25

Y1 - 2017/9/25

N2 - We investigate the magnetization-reversal mode in CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis from the magnetic-field-angle dependence of coercivity. The reversal in a free layer with diameter of ∼20 nm is found to be in a good agreement with coherent reversal mode for a device with a reference layer much larger than the free layer. However, the reversal mode is quite different in a junction in which the two layers are almost the same size. From micromagnetic simulation, the difference is attributed to the reduction of the magnetic anisotropy in the vicinity of the device edge.

AB - We investigate the magnetization-reversal mode in CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis from the magnetic-field-angle dependence of coercivity. The reversal in a free layer with diameter of ∼20 nm is found to be in a good agreement with coherent reversal mode for a device with a reference layer much larger than the free layer. However, the reversal mode is quite different in a junction in which the two layers are almost the same size. From micromagnetic simulation, the difference is attributed to the reduction of the magnetic anisotropy in the vicinity of the device edge.

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Magnetic-field-angle dependence of coercivity in CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis

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