Magnetic-field-angle dependence of coercivity in CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis

J. Igarashi; J. Llandro; Hideo Sato; F. Matsukura; H. Ohno

doi:10.1063/1.5004968

Magnetic-field-angle dependence of coercivity in CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis

J. Igarashi, J. Llandro, Hideo Sato, F. Matsukura, H. Ohno

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

We investigate the magnetization-reversal mode in CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis from the magnetic-field-angle dependence of coercivity. The reversal in a free layer with diameter of ∼20 nm is found to be in a good agreement with coherent reversal mode for a device with a reference layer much larger than the free layer. However, the reversal mode is quite different in a junction in which the two layers are almost the same size. From micromagnetic simulation, the difference is attributed to the reduction of the magnetic anisotropy in the vicinity of the device edge.

Original language	English
Article number	132407
Journal	Applied Physics Letters
Volume	111
Issue number	13
DOIs	https://doi.org/10.1063/1.5004968
Publication status	Published - 2017 Sep 25

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{093e6d13a7c84de187b517f52634aba6,

title = "Magnetic-field-angle dependence of coercivity in CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis",

abstract = "We investigate the magnetization-reversal mode in CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis from the magnetic-field-angle dependence of coercivity. The reversal in a free layer with diameter of ∼20 nm is found to be in a good agreement with coherent reversal mode for a device with a reference layer much larger than the free layer. However, the reversal mode is quite different in a junction in which the two layers are almost the same size. From micromagnetic simulation, the difference is attributed to the reduction of the magnetic anisotropy in the vicinity of the device edge.",

author = "J. Igarashi and J. Llandro and Hideo Sato and F. Matsukura and H. Ohno",

note = "Funding Information: The work was supported in part by R&D for Next-Generation Information Technology of MEXT, ImPACT Program of CSTI, the Cooperative Research Project of RIEC, Tohoku University, and JSPS KAKENHI Grant No. 16K18084. The authors wish to thank E. C. I. Enobio, K. Watanabe, S. Fukami, T. Hirata, H. Iwanuma, Y. Kawato, K. Goto, and C. Igarashi for technical support and discussion. J.I. and J.L. acknowledge support from GP-Spin at Tohoku University. Publisher Copyright: {\textcopyright} 2017 Author(s).",

year = "2017",

month = sep,

day = "25",

doi = "10.1063/1.5004968",

language = "English",

volume = "111",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "13",

}

TY - JOUR

T1 - Magnetic-field-angle dependence of coercivity in CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis

AU - Igarashi, J.

AU - Llandro, J.

AU - Sato, Hideo

AU - Matsukura, F.

AU - Ohno, H.

N1 - Funding Information: The work was supported in part by R&D for Next-Generation Information Technology of MEXT, ImPACT Program of CSTI, the Cooperative Research Project of RIEC, Tohoku University, and JSPS KAKENHI Grant No. 16K18084. The authors wish to thank E. C. I. Enobio, K. Watanabe, S. Fukami, T. Hirata, H. Iwanuma, Y. Kawato, K. Goto, and C. Igarashi for technical support and discussion. J.I. and J.L. acknowledge support from GP-Spin at Tohoku University. Publisher Copyright: © 2017 Author(s).

PY - 2017/9/25

Y1 - 2017/9/25

N2 - We investigate the magnetization-reversal mode in CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis from the magnetic-field-angle dependence of coercivity. The reversal in a free layer with diameter of ∼20 nm is found to be in a good agreement with coherent reversal mode for a device with a reference layer much larger than the free layer. However, the reversal mode is quite different in a junction in which the two layers are almost the same size. From micromagnetic simulation, the difference is attributed to the reduction of the magnetic anisotropy in the vicinity of the device edge.

AB - We investigate the magnetization-reversal mode in CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis from the magnetic-field-angle dependence of coercivity. The reversal in a free layer with diameter of ∼20 nm is found to be in a good agreement with coherent reversal mode for a device with a reference layer much larger than the free layer. However, the reversal mode is quite different in a junction in which the two layers are almost the same size. From micromagnetic simulation, the difference is attributed to the reduction of the magnetic anisotropy in the vicinity of the device edge.

UR - http://www.scopus.com/inward/record.url?scp=85030664037&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85030664037&partnerID=8YFLogxK

U2 - 10.1063/1.5004968

DO - 10.1063/1.5004968

M3 - Article

AN - SCOPUS:85030664037

VL - 111

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

M1 - 132407

ER -

Magnetic-field-angle dependence of coercivity in CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis

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