Magnetic-field and pressure dependence of low-temperature resistivity in UGe2

T. Terashima, K. Enomoto, T. Konoike, T. Matsumoto, S. Uji, N. Kimura, M. Endo, T. Komatsubara, Hayuyoshi Aoki, K. Maezawa

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

We report measurements of resistivity ρ in UGe2 at temperatures T down to 0.3 K, pressures P up to 19.8 kbar, and magnetic fields Bappl up to 17.5 T applied along the magnetic easy a axis. The coefficient A of the T2 term of ρ(T) is determined as a function of Bappl and P. In the large-moment ferromagnetic phase (the low-P high- Bappl phase), A is found to be a function of the single parameter (Bappl - Bx) and approximately obeys a power law A (Bappl - Bx) -1 2, where Bx is the transition field from the small- to the large-moment ferromagnetic phase. The T dependence of ρ at fields just above Bx suggests a contribution to ρ from excitations with a gapped spectrum.

Original languageEnglish
Article number140406
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume73
Issue number14
DOIs
Publication statusPublished - 2006 May 11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Magnetic-field and pressure dependence of low-temperature resistivity in UGe2'. Together they form a unique fingerprint.

Cite this