Magnetic electron focusing effect in gaas/algaas heterostructure with gate-controlled byway channel

Shingo Inoue, Sadao Takaoka, Kazuhito Tsukagoshi, Kenichi Oto, Shigetoshi Wakayama, Kazuo Murase, Kenji Gamo

Research output: Contribution to journalArticle

Abstract

The magnetic electron focusing effect (MEFE) is investigated using a device with two extra probes connected by a gate-controlled byway channel. The focusing peak height is inversely proportional to the byway channel resistance. The results show that the focusing peaks are caused by the current through the byway. It is found that, at most, about 9% of the total current flows in the byway when the focusing effect occurs. Moreover, a countercurrent flows in the byway when the focusing effect does not occur.

Original languageEnglish
Pages (from-to)4329-4331
Number of pages3
JournalJapanese journal of applied physics
Volume34
Issue number8
DOIs
Publication statusPublished - 1995 Aug
Externally publishedYes

Keywords

  • Ballistic transport
  • Electron focusing effect
  • GaAs/AIGaAs heterostructure
  • Magnetoresistance
  • Nonlocal quantum transport

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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