Abstract
The magnetic electron focusing effect (MEFE) is investigated using a device with two extra probes connected by a gate-controlled byway channel. The focusing peak height is inversely proportional to the byway channel resistance. The results show that the focusing peaks are caused by the current through the byway. It is found that, at most, about 9% of the total current flows in the byway when the focusing effect occurs. Moreover, a countercurrent flows in the byway when the focusing effect does not occur.
| Original language | English |
|---|---|
| Pages (from-to) | 4329-4331 |
| Number of pages | 3 |
| Journal | Japanese journal of applied physics |
| Volume | 34 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 1995 Aug |
| Externally published | Yes |
Keywords
- Ballistic transport
- Electron focusing effect
- GaAs/AIGaAs heterostructure
- Magnetoresistance
- Nonlocal quantum transport
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Cite this
Inoue, S., Takaoka, S., Tsukagoshi, K., Oto, K., Wakayama, S., Murase, K., & Gamo, K. (1995). Magnetic electron focusing effect in gaas/algaas heterostructure with gate-controlled byway channel. Japanese journal of applied physics, 34(8), 4329-4331. https://doi.org/10.1143/JJAP.34.4329