TY - JOUR
T1 - Magnetic electron focusing effect in gaas/algaas heterostructure with gate-controlled byway channel
AU - Inoue, Shingo
AU - Takaoka, Sadao
AU - Tsukagoshi, Kazuhito
AU - Oto, Kenichi
AU - Wakayama, Shigetoshi
AU - Murase, Kazuo
AU - Gamo, Kenji
PY - 1995/8
Y1 - 1995/8
N2 - The magnetic electron focusing effect (MEFE) is investigated using a device with two extra probes connected by a gate-controlled byway channel. The focusing peak height is inversely proportional to the byway channel resistance. The results show that the focusing peaks are caused by the current through the byway. It is found that, at most, about 9% of the total current flows in the byway when the focusing effect occurs. Moreover, a countercurrent flows in the byway when the focusing effect does not occur.
AB - The magnetic electron focusing effect (MEFE) is investigated using a device with two extra probes connected by a gate-controlled byway channel. The focusing peak height is inversely proportional to the byway channel resistance. The results show that the focusing peaks are caused by the current through the byway. It is found that, at most, about 9% of the total current flows in the byway when the focusing effect occurs. Moreover, a countercurrent flows in the byway when the focusing effect does not occur.
KW - Ballistic transport
KW - Electron focusing effect
KW - GaAs/AIGaAs heterostructure
KW - Magnetoresistance
KW - Nonlocal quantum transport
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U2 - 10.1143/JJAP.34.4329
DO - 10.1143/JJAP.34.4329
M3 - Article
AN - SCOPUS:0029349795
VL - 34
SP - 4329
EP - 4331
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 8
ER -